HEMT transistor final project presentation

High Electron Mobility Transistor project ppt

1. HIGH ELECTRON MOBILITY TRANSISTOR FOR POWER DEVICE APPLICATION Mentor: Dr.T.S.Arun Samuel Presented by: Vaishnavi M-2011071 Jenifer D-201092 Selva Archana A-2011110

2. Problem statement:- • Optimization of Device Geometry for High-Frequency Performance •Investigation of Material Properties and Heterostructure Effects

3. Objective:- 1. Optimize GaAs/AlGaAs HEMT geometric parameters for high frequency. 2. Investigate material impact and heterostructure design to enhance cutoff and oscillation frequencies in comprehensive simulations.

4. High Electron Mobility Transistor 1. HEMTs excel in high-frequency tasks with swift electron movement. 2. Ideal for clear signal amplification with minimal noise in communication. 3. Compact design and energy efficiency make HEMTs suitable for advanced applications. 4. High-speed, low-noise HEMTs contribute to efficient, small-scale electronic devices..

5. Structure of High Electron Mobility Transistor

6. Advantages of HEMT: 1. High Speed: Swift electron mobility for rapid signal processing. 2. Low Noise: Minimal signal distortion, ideal for clear communication. 3. Power Efficiency:Energy-efficient design, especially in nanoscale applications. 4. Wide Bandwidth:Suitable for applications requiring broad frequency processing. .

7. 1. Complex Fabrication: Involves intricate processes, leading to higher production costs. 2. Operating Sensitivity: Some designs may be sensitive to variations, affecting performance. 3. Temperature Impact: Performance influenced by temperature changes. 4. Voltage Handling Limitations: May have restrictions in voltage handling capabilities for specific applications. Dis advantages of HEMT

8. APPLICATION:- 1. Wireless Communication 2. Microwave and Millimeter-Wave Systems 3. Low-Noise Amplifiers (LNAs) 4. High-Speed Switching and Analog Circuits

9. Title : Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications Author name : Muhaimin Haziq , Shaili Falina , Asrulnizam Abd Manaf Publisher :IEEE ,2022 Inference : Gallium nitride high-electron-mobility transistors (GaN HEMTs) promise superior power and frequency performance, surpassing mainstream silicon. This review explores challenges in aluminum gallium nitride (AlGaN)/GaN HEMT fabrication, addressing issues like normally-on operation, self-heating, current collapse, and gate leakages. It concludes by presenting effective approaches to enhance device performance and reliability. Literature Survey

10. Title : GaN Power Integration for High Frequency and High Efficiency Power Applications Author name : Ruize Sun, Jingxue Lai, Wanjun Chen, Bo Zhang, Publisher: IEEE ,2020 Inference: High-frequency and high-efficiency operation are paramount in signal and energy conversion. Wide bandgap GaN devices outperform Si or GaAs counterparts. This paper advocates for monolithic power integration in GaN electronics. It explores GaN power device structure, favoring lateral integration for GaN power ICs. The review highlights GaN power integration in microwave power amplification and DC-DC power conversion, summarizing technologies in MMIC platforms and advancements in smart GaN power ICs. Demonstrations of high-frequency (>1 MHz) and high-efficiency (>95%) converters with diverse integration methods are examined. Novel integration schemes are introduced to inspire innovation in GaN power integration.

11. Title : Recent Advances in GaN-Based Power HEMT Devices Author name :Jiaqi He, Wei-Chih Cheng, Qing Wang, Kai Cheng, Hongyu Yu Publisher: IEEE,2021 Inference : To meet the escalating demands of power conversion systems, superior alternatives to conventional Si-based devices are imperative. Gallium nitride (GaN) stands out for next-gen high-power electric systems. This review outlines effective strategies for enhancing GaN-based power high electron mobility transistors (HEMTs), emphasizing modified epistructures, recess-free processes, dielectric effects, contact engineering, Au-free ohmic contacts, graphene insertion layers, and the impact of field plates on device performance.

12. Title : AlGaN Channel High Electron Mobility Transistors with Regrown Ohmic Contacts Author name: Idriss Abid ,Jash Mehta , Yvon Cordier Publisher: IEEE,2021 Inference: This study demonstrates the fabrication of AlN/AlGaN/AlN high-electron mobility transistors (HEMTs) with a 50% Al-content AlGaN channel, showcasing a wider bandgap than GaN. Grown via MOCVD on AlN/sapphire templates, the HEMTs exhibit a buffer breakdown field of 5.5 MV/cm, low leakage current, and a three-terminal breakdown voltage exceeding 4 kV with minimal off-state leakage current, paving the way for high-power electronics using ultra-wide bandgap materials.

13. Property GaAs AlGaAs Composition Ga,As AL,Ga,As BandGap 1.43 ev Variable Lattice Constant Varies Influenced by Al content Thermal Expansion Cofficient Varies Influenced by AL content Alloy Composition Formula N/A AlGA-As(0<=X<=1) Electrical Property High Frequency devices Optoelectronic devices Applications Microwave LED,Semiconductor lasers SPECIFICATION

14. SOFTWARE TOOL TCAD SOFTWARE SILVACO SENTARUS VIRTUS

15. The operation of a High Electron Mobility Transistor (HEMT) utilizing Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (AlGaAs) involves the specific properties of these semiconductor materials in a heterostructure. Heterostructure Design 2DEG Formation Gate Voltage Control High Electron Mobility Amplification and Switching Low On-Resistance

16. HEMT STRUCTURE:- GaAs / AlGaAs GaN / AlGaN

17. OUTPUT

18. BAND DIAGRAM GaAs / AlGaAs GaN / AlGaN

19. DRAIN CURRENT VS GATE BIAS GaAs / AlGaAs GaN / AlGaN

20. DRAIN CURRENT VS DRAIN BIAS GaAs / AlGaAs GaN / AlGaN

21. ELECTRIC FIELD X VS Y GaAs / AlGaAs GaN / AlGaN

22. THANK YOU!