semiconductors yawar sir.pdf (neet physics study materials)

neet physics important notes pdf

2. GAMBOANEET. |. 7

SEMICONDUCTORS | a Va
N SL, i)
COMPLETE | À]
CHAPTER | YA 7
DAY 49

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lola co Pacha ont pon 4

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Det vel y

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Ronstae J
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Disp wel Y

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led Fake pee Siliten At tom Temp, wis

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von 14 bere lue Wolk ig Abe

mort OPP Te dow Preecdion
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af Im h wala pus Seriado

Le dake Pure Slim

XL
SÍ Si > $

TG

ST 8

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0 Silus U-Value ás:
had a nA Pau
ho Cd den Pa P '

pi, =! pp i im).

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= = ue
0 Ve = 0 À deity e 4 Genitenduder

Si ==> Mi

D_0

$ ETS si IS

AA
bano dema Com om bts.

Ne >> Vn:
#) Qut=0 lo melös = mo} the
ON Ne A Np D lon.

18. . Mer Le Aller bas

Le ——
=== an

no
den

Temp

— 4 —— À
= aes
_

= ye

ne

19. Adel, Taivalır Impr, Le, Beren.

Lett dale Pore Gumenlun atts E (ve. hecagt Ten)
Ge <> Ge Te om, Ado PIAR Hb Rat
ioe a en
Ge Ge TS Ge m Covdrehvity ns

0-00

Ge — Sea &

20. Ge TD 2
() () Qe $ Vy, >>Ve.
Ge 8 Tee om
ee Came In bow +

0 0 © inna
an ge wing ww Dé

Ge = Ge Ge
MS Na
Yo Bs VA Ne #4 À
Out = 0°

21. These questions consist of two statements each, printed as Assertion and Reason. While answering
ou are required to choose any one of the following four response

these Questions
lanation of the Assertion.

If both Assertion & Reason are True ct e

he misa corr

nota correct explanation of the Assertion.

If both Assertion & Reason are True but Reason is

If Assertion is True but the Reason is False

If both Assertion & Reasonare fal:

22. Assertion :- Metals are better conductor than
semiconductors. [AIIMS-2015]

Reason :- Valence band and conduction band have
large energy gap in case of metals.

(1) A (2) B {3) C (4) D

23. Assertion : If the temperature of a semiconductor
is increased, its resistance decreases.

Reason : The energy gap between conduction band

and valence band in case of semiconductor is small.
DA (2) B (3) € (4) D

24. Assertion : Conductivity of a semiconductor
increases on doping.

Reason : Doping raises the temperature of
semiconductor.

(1) A (2) B (3) € (4) D

25. Assertion : For a given applied voltage, conduction
current in n-type semiconductor is more than that
in p-type semiconductor.

ae : Mobility of electrons is greater than that
of holes.

A) A (2)B (3) € (4) D

26. —_—

ba

Has Defi >

x Vo:

27. co do dis ow, T[ b ' Major C Comins
N Han sn TE nt +
e Preto #4 bd mMComlamad ev Imoums.
of harnon vain om Deseas
res Jer 1 ot
ee Cay |
ne os Ny ve of le, pa umt Vol,
Yow of bol, Poy unt yá:

28. Ove 55 Jn Cu of N-TYPe |
EINER .
worl, uw lle:
To fwd ve 4 UA
Ne, = ni
Not = te

Ms ni
Mo |

29. In Ge 4 P-TR
Mimowily 4 ES-
To find vo of és:
MeN, = 0
MES Na
Ne Na = MH
Ne =A!
M,

30. 23... /Assertion :- In an extrinsic semiconductor dopped
with pentavalent impurity and an intrinsic
semiconductor number of holes are same.

Reason :- Number of holes doesn't depend on

doping concentrations. [AIIMS-2014]
(D A (2)B (3) € (

2?
Fe

m

31. Vit ESTAS
3
Wye 4x 0 fa

Kew N, ig Minow
To find Ve :?

2

Me An = N

Ne = Th
Ny

32. EE
Ne

35. Which one of the following statement is false?

(a) Pure Si doped with trivalent impurities gives a p-type semiconductor.

(b) Majority carriers in a n-type semiconductor are holes.
(©) Minority carriers in a p-type semiconductor are electrons

(d) The resistance of intrinsic semiconductor decreases with increase of
temperature.

36. PON a
—
item P-Type and NTffe Gerritmdued am Term
Tin > y fern PN Jurcdion Brook
P-TyA N-Type > © E lol tecomiansbiew Tales pou
N 5 Depuis u. Y Gmsled:
bm du és Mobe 4 25 amd hd
Count is Produ od 1 Called porción
Ort |

BE Ton PNG

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oh ve EN ra se
du hu À

Move. Dome pdd bu

dera ut

Jonge fromm N-P.
Rav Sone he '
[Sagan = [A |

Iu =0

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E te devin à
Corédel do N-Gide de Diode à Gud
À be forro 077

+ dow D on Le à due |
md E hole Auternbivnhlon Tale pie
uw ein.

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due Botley foo tard N-Gile Once es
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Lio '

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on Ln Yu PD
Cured im
Al Arten Vale 4Po
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[PA Velo

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o Hew ph how Tu:

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So we mm i Produced:

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nd

on Ln la Volta Eu

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SY m De Omen.
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DM Brake Vallee.

bo im revue Bibb Biol Reborn, Vite Ow Por
VI

Cal

Mov gay 20V lov
x

N

44. Assertion : In an unbiased p-n junction, holes diffuse
from the p-region to n-region.

Reason : Hole concentration in p-region is more
as compared to n-region.

(1) A (2) B (8) € (4) D

45. Assertion : For forward biasing, positive terminal
of external battery is connected to p-type and

negative terminal of external battery is connected
to n-type semiconductor.

Reason : This would support the tendency of
majority charge carriers to cross the junction.

(1) A (2) B (3) C (4) D

46. Assertion : For agiven applied voltage, conduction

current in n-type semiconductor is more than that
in p-type semiconductor.

Reason : Mobility of electrons is greater than that
of holes.

(DA (2) B (3) € (4) D

47. NEET 2020

48. Consider the junction diode as ideal. The value of current flowing through AB

(a) 107A

(b) 103 A

(J0A

(9) 102A a

49. In the Following figure, the diodes which are Forward biased, are

(2) (A), (8) and (D)

€) (©) only A

(© (C) and (A)

(@) (8) and (D)

50. NEET 2017

51. Of the diode

JEE 2004

52. Q. NEET D016

Rudo de Citony
22

= 25h

53. Two ideal diodes are connected to a battery as shown in the circuit. The
current supplied by the battery is

(8) 0.75 A

(b) zero D, » Revere Bar
D, à for word Bieyd

(025A

(d)0.5 A
103)

AE

GV

54. Q. Pind Oum Floong dore de Balter.

Wo" o1V V,=03V

o” V SEN Re lost =V y
pl
uv ( lo *

57. Te à a A vd d Cmvol AC mb DC.
Ac= Brobiccehional Cond
De — Umpiuehoal Cort

aa

ave

B

58. Ac á e
cu Te tp à fluted

Pue Bode wi allow ds +ve Ge om vo nd que
oud vo ML Met allo te Ve cade
fo de ovkput vil be

| Ten,

59. (Pea nu q
We à well as -ve.

How +ve ems wul a ve

aque [amos In due lop

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l Coe +ve Gey DC EN Ama
oro onndmn ¿de
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— Ve

we We Gpacrhve flee.

62. rom

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de

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ye it mmndaim due Edo pata

syn bd .

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e I} works in Revve Dion Cohen:
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64. ( | Ty
ey Tv
e Rr =Y
et | gov a

67. Bue hu
jo: to PM

pay

68. Vin=6V Vat = OV
Vin= av

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When Plus fa ow de pre
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p de us.
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da

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dale pl.

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73. e lo we met be abe ¿te Ide
P lodons -
u 3} poe Wal to ame 4 qs LED.
e. £o Wo wake Led by Gong Cemirdebr.
ke Galium Megmmed (am Condvcher.
Hs Boul Gap is im orden of Ile

74. Assertion :- GaAs can be used in making infrared
LEDs.

Reason :- Its band gap lies between 1.8 eV to

3eV. [AIIMS-2018]
(1) A (2)B (3) C (4)D

75. Assertion :- Photodiode always works under
reverse bias condition. [AIIMS-2017]

Reason :- It is easier to detect current changes in

rase bias.

(3) C (4) D

76. Assertion :- Absorption factor for GaAs is larger
as compared to Si for sunlight. [AIIMS-2017]

Reason :- AE, is more for GaAs.

(1) A (2) B ‘ (4) D

77. Cape)

Are

78. O — ovelt > Low —> off

Digital Grgual <
N _oCvdt — ligh— on

u ;
wwe des Daput md ond prot la do des farm 4 0 onal | ee.

80. A+rB=A:-B

>|

D>
®
rt
Bi
+
ol

81. A+8 = BtA

A+(0+c) = (A+B) + A (bs) = ABTA

82. Conds On dhe Dies Wind dake Input and Prosa ovdprd.
Rundradal Gala?
) NoT D oR 3) AND

83. Tt, work Y do de Enveve
Syria.
A >— _
(tmpw) 4 =A
A »

af

Ta Table.

84. Eluient, ymvald Cire 4

Time Sole +
|
E - to! NOT GATE ?
A CU; oO CR quid
m [ni
E \ \
‘ © x : Ve :
—— <a} El,

86. IL work à do de Addition:

Zed A

e a) Ort png à lier vo hem
8 - Jara Mth He dre SEE
qe len Safin Ga Are: à op % lo lan eth.
tdo Tobe? [A] B [Es de topo on leo

87. Ebchook Sapa Oro 4
OR GATE? >

88. Ir wok ib do de Mubhptionen N ER Lao if Oy 9 dea

gore, paa do doo amp do leo
$
& GEAR ou à un if bob de
o lal
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qe
rate [eae] ~

0
|
o
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89. Eco que aro 4 AND GATE
\ kee

ER
pr

90. NOR GATE) «mu

volam OR Gale 6 Combina void MoT Galo, 5é ferme
Nok Me, OR +NoT = Nok:
A+ Ate

e OR NoT

Syrel A > Y = ate
y Wee: Bolom “vt Pasion
gs At

91. cara lao Blum omy 4 du hos Daprk
» ,

Ord put % Whe wlın Bede he Inprk ay, Lo.

Time Sul | \
A o en e
E lo.
ll I
—_

92. E valet Arme 4 NOR GAL.

93. Singh amp POR Cae Bu Lu a MT nr

A e
A Y =A+8 a
B >
Hoe A=B er
fo Gat pol à
Y= AFA

ae Y Je ontpnd of NOT ATE

94. NEET 2017

95. NANO GATE Tee Table

DS RE V
B

AND MT

AND+NoT= WAND

Suen A

g= AR
u De

96. af “q 7 due has Impeds 5 le output à ben E
ond pal % Lovo if Lot, Ye Inprk ve Wil

Elben Syvivalond ci onl + Y

NAND

97. NEET IONS

98. to the logic gate
NEETIIA
+6V

99. NEET9010

Y

Y=AB+AB