The hot pick-up technique for batch assembly of van der Waals heterostructures

In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.
In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures, demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal bor

1. The hot pick-up technique for batch assembly of van der Waals heterostructures Presentation by Aiman Malik

2. Introduction In this research article authors presented a technique for the rapid batch fabrication of van der Waals heterostructures , demonstrated by the controlled production of 22 mono-, bi- and trilayer graphene stacks encapsulated in hexagonal boron nitride with close to 100% yield.

3. Motivation Unique Optical Properties Challenging Interface Cleanliness Impact on Device Performance :

4. Exfoliation of 2D materials Production of mono-, bi-, and trilayer graphene and thin hBN flakes Methodology: Production of mono-, bi-, and trilayer graphene and thin hBN flakes Comparison of I(2D)/I(G) peak ratios of graphene Use of PPC-coated PDMS block for capturing and releasing 2D materials.

5. Avoidance of blisters during assembly Comparing stacking at 110°C vs. 40°C. Interface cleanliness affected by temperature and approach speed. Stacking at 40°C: Blister-free initially. Heating above 70°C: Blister formation, growth, and stabilization.

6. Transfer graphene on hBN to silicon nitride TEM grids. Tilted beam dark-field TEM imaging. Enhanced contrast technique for detecting lattice-spaced materials. Oxygen is present

7. Conclusion Achieving exceptional device performance without relying on high-temperature annealing marks a revolutionary breakthrough. High-performance 2D material devices are now within reach through innovative assembly methods. This advancement opens the door to efficient and practical fabrication processes, enhancing the feasibility of widespread applications. The absence of high-temperature annealing simplifies manufacturing, reduces energy consumption, and broadens the potential for diverse device functionalities.