* Derivation of drain current for channel length modulation
«* Characteristics of MOSFET with channel length modulation
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Basics of Channel length Modulation
« In saturation region of working with MOSFET, there is channel length
Modulation with MOSFET.
«In that channel length will change with respect to drain voltage of
MOSFET.
«< Channel length will decrease with respect to increase in drain
voltage in saturation region.
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Channel Length Modulation in MOSFET
Gate G
Ves > Vro
Source S Drain D
Metal
Oxide SiO2
P Type Si Substrate
Substrate
“1 e «+ At pinch off point of channel, channel voltage will be Vpsar
Source $ Metal o a, * Gradual channel approximation is only valid in channel,
Bias Er Berne as per that drain current n deep saturation is given by
= €
Ip(sat) re N as — Vo)?
P Type Si Substrate 27
Hn-Cox W
+ Ip(sat) = << Wes - Vr0)*
= p(sat) 2 ‘&-4D (Ves — Vro)
++ Total charge density in channel is given by + Ip(sat) = (=a) puro . (Ves - Vro)?
Qu(Y) = —CoxWes - Ve) — Vrol TL:
> Inversion layer charge at source (Y=0) end is given by did
| Vos —Vosar
Qi = 0) = —CoxlVas — Vro] AL & /Vos — Vosar
«+ To simplify this drain current equation, we will take A
+ Inversion layer charge at Drain end (Y=L) end is given by
(Channel length modulation coefficient)
Qu(Y = L) = —CoxlVes — Vos — Vro]
«+ At the edge of saturation Vps = Vpsar a1 -4 =1-W ys > —— = =1+ ps
Vos = Vosar = Ves — Vro La T
«+ Inversion layer charge at Drain end (Y=L) in saturation | *% So drain current is given by
region is given by _ Hn Cox W 2
OY =1) ~0 + Ip(sat) = 2 1 (Vas —Vro)?.(1 + AVps)
“Effective channel length in saturation region will become