Introduction to optoelectronic in a polite

Introduction

1. Physics and Modeling of Microelectronic Devices MEL ZG631 Lecture-01 Dr. Nilesh Goel Department of Electrical and Electronics BITS Pilani Dubai Campus [email protected] 1

2. The material in this presentation is gathered from a large number of textbooks, online and other resources. The copyright is held by the respective authors. No originality of any nature is claimed here as this material is available in public domain. The material is arranged in its present form purely for instructional/educational purposes and should not be used for any other purpose. Nilesh Goel Disclaimer 2 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

3. This course will cover physics of semiconductor material and semiconductor devices. Correlate semiconductor material physics fundamentals with semiconductor device physics. It aims at making the basic physical concepts behind microelectronic devices clear and imparts modeling information about these devices for their use as circuit elements in integrated circuits. The course covers the basic technology, models, properties, and concepts associated with Semiconductors and Semiconductor devices. Course Information 3 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

4. Born and bought up in Uttar Pradesh (UP). Education B.Tech . in ECE from Motilal Nehru NIT Allahabad (2003-2007) Ph.D. from IIT Bombay, Electrical Engineering Department (2011-2015) Worked at STMicroelectronics, Greater NOIDA (2007-2010) Synopsys NOIDA (2014-2015) SanDisk, Bangalore now WD (2015-2016) Shiv Nadar University, Greater NOIDA (2016-2017) BITS Pilani Dubai Campus, Dubai (July 2017- till Date) Email: [email protected] My Background 4 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

5. Text Book T1: Muller R. S and Kamins T. I., “Device Electronics for Integrated circuits”, John Wiley, 3 rd ed., 2003 Reference Book R1: Donald A. Neamen, “Semiconductor Physics and Devices”, Fourth Ed. R2: Sze S. M., “Physics of Semiconductor Devices”, 2 nd Ed., Wiley Eastern, 1981. R3: Tyagi M. S., “ Introduction to Semiconductor Materials and Devices”, John Additional Material Time to time additional material in the form of research papers, video links and lecture slides etc. will be provided. Reading Material 5 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

6. Donald A. Neamen, “Semiconductor Physics and Devices”, Fourth Ed. Preferred Book 6 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

7. History of Semiconductors Crystal Structure of Solids Band Theory Types of Solids Space Lattice Miller Indices Diamond Structure Imperfections in Solids Bond and Band Model of Silicon Bond Model Band Model ( Next Class) Lecture Outline 7 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

8. History ( Transistor Invention ) 8 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus Bardeen, Shockley, and Brattain at Bell Labs - Brattain and Bardeen invented the bipolar transistor in 1947. Point contact Ge bipolar transistor

9. First Transistor: Dec 1947 9 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

10. First Integrated Circuit 10 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus R. N. Noyce Fairchild Semiconductor Co-Founder of both Fairchild and Intel “ Unitary Circuit ” made of Si Jack Kilby Texas Instruments Invented IC during his first year at TI (Nobel Prize winner) “ Solid Circuit ” made of Ge

11. 60+ years of EXPONENTIAL Progress for Integrated Circuits. “The technology at the leading edge changes so rapidly that you have to keep current after you get out of school. I think probably the most important thing is having good fundamentals .”       Moore’s Law 11 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

12. Transistor Size and Pitch 12 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus Transistor gate half pitch is used to name the technology, not the minimum feature size. Pitch dictates the maximum number of devices in a given area, and hence the functional density.  = half pitch Minimal device area = 4 2 Highest function density = 1/(4  2 ) Drain v DS Source Gate 2 v DS Source Gate 2 Gate Pitch Drain

13. Transistor Count 13 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

14. 14 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus 120 years of Computational Electronics

15. Continuing log scaling 15 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

16. Transistor Evolution 16 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

17. Transistor Evolution (cont.) 17 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

18. Transistor Evolution (cont.) 18 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

19. 14nm vs 7nm FinFET 19 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

20. Transistor Evolution (cont.) 20 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

21. Transistor Evolution (cont.) 21 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

22. Transistor Evolution (cont.) 5nm IBM transistor 22 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

23. Transistor Evolution (cont.) 23 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

24. Future 24 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus Nanowires III-V Semiconductors 2D Materials Graphene, MoS 2 Photonics 3D IC stacking

25. Ohm ’ s law: I = V / R or J =  E;  (conductivity) = 1 /  ;  = R A / L  = 10 -4 – 10 -6 - cm (metal) = 10 -4 – 10 12 - cm (semiconductors) Their natural electrical properties lies between metal and insulator. These natural properties can be altered easily to temporarily or permanently. Temperature dependence: Metals: R increases at higher T; Semiconductors: R reduces at higher T Semiconductor 25 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

26. Periodic Table 26 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus The elements and groups marked in red box are used in semiconductor.

27. Elemental semiconductors: Silicon (Si), Germanium (Ge) Compound semiconductors: (a) IV-IV : SiC (b) III-V: AlP , AlAs , AlSb , GaN , GaP , GaAs, GaSb , InP , InAs , InSb . (c) II-VI: ZnO , ZnS , ZnSe , ZnTe , CdS , CdSe , CdTe , HgS . (d) IV-VI: PbS , PbSe , PbTe Alloys: Binary: Si (1-x) Ge x Ternary: Al x Ga (1-x) As, Al x Ga (1-x) N, Al x Ga (1-x) Sb, In x Al (1-x) As, In x Ga (1-x) As, In x Ga (1-x) N Quaternary: Al x Ga (1-x) As y Sb (1-y) , Ga x In (1-x) As (1-y) P y . Different Types of Semiconductors 27 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

28. History of Semiconductors Crystal Structure of Solids Types of Solids Space Lattice Miller Indices Diamond Structure Imperfections in Solids Bond and Band Model of Silicon Bond Model Band Model Lecture Outline 28 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus

29. Thank You See you next class 29 MEL ZG631 Physics & Modelling of Microelectronic Devices, Dr. Nilesh Goel, EEE Dept. BITS Pilani Dubai Campus