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spike anneal

1. Process Insights: Crystal defects in the implanted region Not all implanted dopants will be in the activated state. Defect correction needed Activation of dopants needed But for USJ, Regular Anneal Process has several drawbacks- The shallow implant profile of high-dose low-energy implants diffuses substantially when annealed to electrically activate a signification fraction of the dopant, owing to Transient enhanced diffusion (TED)effects , Junction depth increases, I(OFF) increases Abrupt lateral Junction can form which enhance the probability of short channel effect . Annealing process serves the purpose.

2. Spike Annealing: Ramping the temperature to the Peak Temperature with very high ramping rate Short (~1 sec) or no soak time.

3. To calculate NiSi thickness, you typically use experimental data and theoretical growth models. Common methods involve measuring the film's thickness after deposition or annealing, then correlating the thickness to factors like annealing time or deposition conditions. Here's a breakdown of how you can approach this: 1. Understanding NiSi Growth: NiSi Formation: NiSi forms through the reaction between nickel (Ni) and silicon (Si). Growth Kinetics: NiSi growth is often modeled as a diffusion-limited process, meaning the rate at which Ni and Si atoms diffuse to form NiSi is the limiting factor. Factors Influencing Growth: Temperature, annealing time, and the concentration of Ni and Si atoms all influence the NiSi thickness.

4. Measurement Methods: Optical Metrology: This involves using light to measure the film's thickness. It can be challenging with absorbing films like NiSi , but techniques are available. Transmission Electron Microscopy (TEM): TEM provides a detailed view of the NiSi film's microstructure and can be used to measure thickness. X-ray Diffraction (XRD): XRD can identify the NiSi phase and, in some cases, help determine thickness. Sheet Resistance Measurements: The electrical resistance of a thin film can be related to its thickness.