Original IGBT FGPF50N33 50N33 50A 330V TO-220F New Fairchild

Original IGBT FGPF50N33 50N33 50A 330V TO-220F New Fairchild

1. ©2008 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGPF50N33BT Rev. C1
FGPF50N33BT — 330 V PDP Trench IGBT
November 2013
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.1
2: Half Sine Wave, D < 0.01, pluse width < 10usec
*Ic_pluse limited by max Tj
Symbol Description Ratings Unit
V
CES
Collector to Emitter Voltage 330 V
V
GES Gate to Emitter Voltage  30 V
I
C Collector Current @ T
C = 25
o
C50 A
I
Cpulse (1)*
Pulsed Collector Current
@ T
C = 25
o
C
120 A
I
Cpulse (2)* Pulsed Collector Current @ T
C
= 25
o
C 160 A
P
D
Maximum Power Dissipation @ T
C = 25
o
C43 W
Maximum Power Dissipation @ T
C = 100
o
C 17.2 W
T
J
Operating Junction Temperature -55 to +150
o
C
T
stg Storage Temperature Range -55 to +150
o
C
T
L
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
o
C
Symbol Parameter Typ. Max. Unit
R
JC(IGBT) Thermal Resistance, Junction to Case - 2.9
o
C/W
R
JA
Thermal Resistance, Junction to Ambient - 62.5
o
C/W
TO-220F
G E C
FGPF50N33BT
330 V PDP Trench IGBT
Features
• High Current Capability
• Low Saturation Voltage: V
CE(sat) =1.6 V @ I
C = 50 A
• High Input Impedance
•RoHS Compliant
Applications
•PDP TV
General Description
Using novel trench IGBT technology, Fairchild's new series of
trench IGBTs offer the optimum performance for PDP TV appli-
cations where low conduction and switching losses are essen-
tial.

2. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGPF50N33BTTU FGPF50N33BT TO-220F Tube N/A N/A 50
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BV
CES
Collector to Emitter Breakdown Voltage V
GE
= 0 V, I
C
= 250 A, Tc=25
o
C330 - - V
V
GE = 0 V, I
C = 250 A, Tc=125
o
C340 - - V
BV
CES
T
J
Temperature Coefficient of Breakdown
Voltage
V
GE
= 0 V, I
C
= 250 A -0.2-V/
o
C
I
CES Collector Cut-Off Current V
CE = V
CES, V
GE = 0 V, Tc=25
o
C- - 20 A
V
CE
= V
CES
, V
GE
= 0 V, Tc=125
o
C - - 200 A
I
GES G-E Leakage Current V
GE = V
GES, V
CE = 0 V - - ±200 nA
On Characteristics
V
GE(th) G-E Threshold Voltage I
C = 250 A, V
CE = V
GE 2.3 3.3 4.3 V
V
CE(sat)
Collector to Emitter Saturation Voltage
I
C
= 20 A, V
GE
= 15 V, - 1.2 1.5 V
I
C = 30 A, V
GE = 15 V, - 1.3 - V
I
C = 50 A, V
GE = 15 V,
T
C = 25
o
C
-1.6- V
I
C = 50 A, V
GE = 15 V,
T
C = 125
o
C
-1.7- V
Dynamic Characteristics
C
ies Input Capacitance
V
CE = 30 V
, V
GE = 0 V,
f = 1 MHz
- 980 - pF
C
oes
Output Capacitance - 70 - pF
C
res Reverse Transfer Capacitance - 40 - pF
Switching Characteristics
t
d(on) Turn-On Delay Time
V
CC = 200 V, I
C = 20 A,
R
G
= 5 , V
GE
= 15 V,
Resistive Load, T
C = 25
o
C
-9-ns
t
r
Rise Time - 33 - ns
t
d(off) Turn-Off Delay Time - 32 - ns
t
f Fall Time - 202 - ns
t
d(on)
Turn-On Delay Time
V
CC = 200 V, I
C = 20 A,
R
G = 5 , V
GE = 15 V,
Resistive Load, T
C = 125
o
C
-9-ns
t
r Rise Time - 37 - ns
t
d(off)
Turn-Off Delay Time - 33 - ns
t
f Fall Time - 332 - ns
Q
g Total Gate Charge
V
CE = 200 V, I
C = 20 A,
V
GE
= 15 V
-35-nC
Q
ge
Gate to Emitter Charge - 6 - nC
Q
gc Gate to Collector Charge - 14 - nC

3. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics
Characteristics
Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
0.0 1.5 3.0 4.5 6.0
0
40
80
120
160
20V
TC = 25
o
C

15V
12V
10V
VGE = 8V
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
0.0 1.5 3.0 4.5 6.0
0
40
80
120
160
20V
TC = 125
o
C


15V
12V
10V
VGE = 8V
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
012345
0
40
80
120
160
Common Emitter
VGE = 15V
TC = 25
o
C
TC = 125
o
C


Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]
03691215
0
40
80
120
160
Common Emitter
VCE = 20V
TC = 25
o
C
TC = 125
o
C
Collector Current, I
C
[A]
Gate-Emitter Voltage,VGE [V]
0 4 8 121620
0
4
8
12
16
20
IC = 20A
30A
50A
Common Emitter
T
C
= 25
o
C

Collector-Emitter Voltage
,
V
CE
[V]
Gate-Emitter Voltage, VGE [V]
25 50 75 100 125
0.8
1.0
1.2
1.4
1.6
1.8
2.0
50A
30A
IC = 20A
Common Emitter
VGE = 15V

Collector-Emitter Voltage, V
CE
[V]
Case Temperature, TC [
o
C]

4. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V
GE Figure 8. Capacitance Characteristics
Figure 9. Gate charge Characteristics Figure 10. SOA Characteristics
Figure 11. Turn-on Characteristics vs. Figure 12. Turn-off Characteristics vs.

0 4 8 121620
0
4
8
12
16
20
IC = 20A
30A
50A
Common Emitter
TC = 125
o
C


Collector-Emitter Voltage, V
CE
[
V
]
Gate-Emitter Voltage, VGE [V]
110
0
500
1000
1500
Common Emitter
VGE = 0V, f = 1MHz
TC = 25
o
C
C
res
C
oes
C
ies


Capacitance [pF]
Collector-Emitter Voltage, VCE [V]
30
010203040
0
3
6
9
12
15
Common Emitter
TC = 25
o
C
200VV
CC
= 100V


Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Qg [nC]
0.1 1 10 100 400
0.01
0.1
1
10
100
500
Single Nonrepetitive
Pulse T
C
= 25
o
C
Curves must be derated
linearly with increase
in temperature
DC
10s
100s

Collector Current, I
c
[A]
Collector-Emitter Voltage, VCE [V]
0 1020304050
1
10
100
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(on)
t
r

Switching Time [ns]
Gate Resistance, RG []
0 1020304050
10
100
1000
4000
Common Emitter
VCC = 200V, VGE = 15V
IC = 20A
TC = 25
o
C
TC = 125
o
C
t
d(off)
t
f

Switching Time [ns]
Gate Resistance, RG []
Gate Resistance Gate Resistance

5. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Collector Current Collector Current
Figure 15. Switching Loss vs. Gate Resistance Figure 16. Switching Loss vs. Collector Current
Figure 17. Turn off Switching SOA Characteristics
10 20 30 40 50
10
100
1000
5000
Common Emitter
VGE = 15V, RG = 5
T
C
= 25
o
C
T
C
= 125
o
C
t
d(off)
t
f
Switching Time [ns]
Collector Current, IC [A]
10 20 30 40 50
5
10
100
200
Common Emitter
VGE = 15V, RG = 5
T
C
= 25
o
C
T
C
= 125
o
C
t
r
t
d(on)
Switching Time [ns]
Collector Current, IC [A]
0 1020304050
10
100
1000
5000
Common Emitter
V
CC
= 200V, V
GE
= 15V
I
C
= 20A
T
C
= 25
o
C
T
C
= 125
o
C
E
on
E
off

Switching Loss [μJ]
Gate Resistance, RG []
10 20 30 40 50
1
10
100
1000
10000
20000
Common Emitter
V
GE
= 15V, R
G
= 5
T
C
= 25
o
C
T
C
= 125
o
C
E
on
E
off
Switching Loss [μJ]
Collector Current, IC [A]
11 01 005 00
1
10
100
200
Safe Operating Area
V
GE
= 15V, T
C
= 125
o
C
Collector Current, I
C
[A]
Collector-Emitter Voltage, VCE [V]

6. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Typical Performance Characteristics
Figure 18.Transient Thermal Impedance of IGBT

1E-5 1E-4 1E-3 0.01 0.1 1 10 100
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.3
single pulse

Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2

Peak T
j
= Pdm x Zthjc + T
C
0.5
t
1
P
DM
t
2

7. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FGPF50N33BT Rev. C1
Package Dimensions
Figure 19. TO-220F 3L - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
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Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
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8. FGPF50N33BT — 330 V PDP Trench IGBT
©2008 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FGPF50N33BT Rev. C1
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