SPICE MODEL of TPCA8057-H (Standard+BDS Model) in SPICE PARK

SPICE MODEL of TPCA8057-H (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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Device Modeling Report
























Bee Technologies Inc.

COMPONENTS: MOSFET (Model Param eters)
PART NUMBER: TPCA8057-H
MANUFACTURER: TOSHIBA
REMARK: Body Diode (Model Parameters)

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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MOSFET MODEL









PSpice model
parameter
Model description
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility

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Transconductance Characteristics

Circuit Simulation result















Comparison table

















ID(A)
gfs (S)
%Error
Measurement Simulation
4 47.000 48.518 3.23
8 66.000 67.231 1.87
16 91.500 92.444 1.03
32 126.000 125.801 -0.16
48 152.000 149.740 -1.49
64 173.000 168.898 -2.37

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V_V1
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
0A
16A
32A
48A
64A
80A






















V1
0Vdc
V2
10
0
V3
0
U1
TPCA8057-H














Vgs-Id Characteristics

Circuit Simulation result















Evaluation circuit

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Comparison Graph

Simulation result















Comparison table
















ID(A)
VGS (V)
%Error
Measurement Simulation
2 2.430 2.469 1.58
4 2.500 2.517 0.66
8 2.600 2.586 -0.56
16 2.700 2.686 -0.54
32 2.830 2.832 0.06
48 2.920 2.948 0.95
64 3.000 3.048 1.60
80 3.080 3.138 1.90

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0
V3
0
VDS
0Vdc
V1
10
U1
TPCA8057-H













V_VDS
0V 10mV 20mV 30mV 40mV 50mV
I(V3)
0A
7A
14A
21A























Rds(on) Characteristics

Circuit Simulation result















Evaluation circuit










Test condition: ID=21 (A), VGS =10 (V)
Parameter Unit Measurement Simulation %Error
RDS(on) mΩ 2.000 2.000 0.00

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Time*1mA
0 14n 28n 42n 56n 70n
V(W1:2)
0V
4V
8V
12V





















VDD
24
I1
TD = 0
TF = 5n
PW = 600u
PER = 1000u
I1 = 0
I2 = 1m
TR = 5n
-
+
W1
ION = 0uA
IOFF = 1mA
W
I2
42
0
Dmod
D1
0
U1
TPCA8057-H














Gate Charge Characteristics

Circuit Simulation result















Evaluation circuit










Test condition: VDD=24 (V), ID=42 (A), VGS =10 (V)


Parameter Unit Measurement Simulation %Error
Qgs nc 13.000 13.049 0.38
Qgd nc 7.700 7.680 -0.26
Qg nc 61.000 51.334 -15.85

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Capacitance Characteristics

Simulation result















Comparison table
















VDS(V)
Cbd (pF)
%Error
Measurement Simulation
0.1 2170.000 2175.000 0.23
0.2 2060.000 2061.000 0.05
0.5 1810.000 1798.500 -0.64
1 1520.000 1513.100 -0.45
2 1200.000 1190.500 -0.79
5 800.000 795.200 -0.60
10 565.000 560.800 -0.74
20 390.000 387.200 -0.72
30 316.000 309.910 -1.93
Simulation
Measurement

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VDD
15.09Vdc
0
V2
TD = 1u
TF = 5n
PW = 10u
PER = 20u
V1 = 0
TR = 5n
V2 = 20
R2
4.7
R14.7L130nH
L2
50nH
U1
TPCA8057-H
RL
0.71













Time
0.92us 0.96us 1.00us 1.04us 1.08us1.12us
V(U1:4) V(U1:5)/1.509
0V
2V
4V
6V
8V
10V
12V























Switching Time Characteristics

Circuit Simulation result















Evaluation circuit










Test condition: ID=21 (A), VDD=15 (V), VGS=10/0 (V)
Parameter Unit Measurement Simulation %Error
ton ns 14.000 14.086 0.61

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V_V2
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(V3)
0A
20A
40A
60A
80A
100A






















V2
2
V1
0
V3
0Vdc
U1
TPCA8057-H














Output Characteristics

Circuit Simulation result















Evaluation circuit

















VGS=2.6V
2.8V
2.9V
3V
3.1V
3.2V
3.3V
3.4V
4V
4.5V
5V
6V
8V
10V

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V_VDS
0V -0.2V -0.4V -0.6V -0.8V -1.0V
I(Vsense)
1.0A
10A
100A
1.0KA






















VDS
0
Vsense
0Vdc
VGS
0Vdc
U1
TPCA8057-H














FWD Forward Current Characteristics

Circuit Simulation result















Evaluation circuit

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Comparison Graph

Simulation result















Comparison table
















IDR(A)
-VDS (V)
%Error
Measurement Simulation
1 0.6780 0.6746 -0.50
2 0.6900 0.6910 0.14
5 0.7130 0.7167 0.52
10 0.7400 0.7417 0.23
20 0.7750 0.7731 -0.24
50 0.8300 0.8279 -0.25
100 0.8870 0.8875 0.06
125 0.9120 0.9125 0.05

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Time
0.7us 0.9us 1.1us 1.3us 1.5us 1.7us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA






















V1
TD = 75ns
TF = 10ns
PW = 1us
PER = 100us
V1 = -9.35v
TR = 10ns
V2 = 10.7v
R1
50
0
U1
TPCA8057-H














Reverse Recovery Characteristics

Circuit Simulation result















Evaluation circuit










Compare Measurement vs. Simulation



Parameter Unit Measurement Simulation %Error
trj ns 24.000 24.318 1.33

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Reverse Recovery Characteristics Reference
















Trj = 24.00 (ns)
Trb = 96.00 (ns)
Conditions: Ifwd = lrev = 0.2(A), Rl = 50
















Relation between trj and trb
Example


Measurement