Dynamic Random Access Memory H as memory cells with a paired transistor & capacitor. Each bit data is store in separate capacitor .
Dynamic Random Access Memory Capacitor may be charged or uncharged . Charging & discharging represent the two values of data (0,1)
Dynamic Random Access Memory Types are:
Static Random Access Memory
Static Random Access Memory Uses multiple transistors for cell. Doesn't have a capacitor in each cell . It is made up of flip flop circuit. It use voltage to store data.
Static Random Access Memory Each SRAM is made of six transistors. Each bit in an SRAM is stored on four transistor or more.
Types are: Static Random Access Memory
S tatic vs Dynamic
Magneto resistive Random Access memory
Magnetoresistive Random Access memory Stores data using magnetic charges instead of electrical charges.
Greater storage capacity. Consumes less power. Faster access times than electronic RAM. MRAM retains its contents after power is removed from the computer. Magnetoresistive Random Access memory
DDR SDRAM DDR3 DDR4 SDRAM – 66Mhz, 100Mhz , 133Mhz DDR1 – 266Mhz, 333Mhz, 400Mhz DDR2 – 400Mhz, 533Mhz, 677Mhz, 800Mhz DDR3 – 400Mhz , 533Mhz, 677Mhz, 800Mhz, 933Mhz , 1066Mhz DDR4 – 1600Mhz, 1866Mhz, 2133Mhz, 2400Mhz, 2666Mhz, 3200Mhz, 4266Mhz JEDEC Solid State Technology Association Joint Electron Device Engineering Council 1.5 or 1.65 v 800 and 2400 16 Gb 1.2 v 1600 and 3200 128 Gb