5 l0380r

1. ©2002 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev.1.0.5
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current(Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Current Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Applications
• SMPS for VCR, SVR, STB, DVD & DVCD
• SMPS for Printer, Facsimile & Scanner
• Adaptor for Camcorder
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consists of a
high voltage power SenseFET and a current mode PWM IC.
Included PWM controller integrates the fixed frequency
oscillator, the under voltage lock-out, the leading edge
blanking, the optimized gate turn-on/turn-off driver, the
thermal shutdown protection, the over voltage protection,
and the temperature compensated precision current sources
for the loop compensation and the fault protection circuitry.
Compared to a discrete MOSFET and a PWM controller or
an RCCsolution, a Fairchild Power Switch(FPS) can reduce
the total component count, design size and weight and at the
same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for the cost
effective design in either a flyback converter or a forward
converter
Internal Block Diagram
#3 VCC
32V
5
µA
9V
2.5R
1R
1mA
0.1V
+
−
OVER VOLTAGE S/D
+
−
7.5V
27V
Thermal S/D
S
R
Q
Power on reset
+
−
L.E.B
S
R
Q
OSC
5V
Vref
Internal
bias
Good
logic
SFET
#2 DRAIN
#1 GND
#4 FB
(*#3 VCC)
(*#4 FB)
(*#1.6.7.8 DRAIN)
(*#2 GND)
*Asterisk - KA5M0365RN, KA5L0365RN
KA5x03xx-SERIES
KA5H0365R, KA5M0365R, KA5L0365R, KA5M0365RN,
KA5L0365RN, KA5H0380R, KA5M0380R, KA5L0380R
Fairchild Power Switch(FPS)
TO-220F-4L
1. GND 2. Drain 3. V
CC 4. FB
1
8-DIP
1.6.7.8 Drain
2. GND
3. V
CC
4. FB 5. NC

2. KA5X03XX-SERIES
2
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
Characteristic Symbol Value Unit
KA5H0365R, KA5M0365R, KA5L0365R
Maximum Drain Voltage V
D,MAX 650 V
Drain-Gate Voltage (R
GS=1MΩ)V DGR 650 V
Gate-Source (GND) Voltage V
GS ±30 V
Drain Current Pulsed
(1)
IDM 12.0 A DC
Continuous Drain Current (TC=25°C) I D 3.0 A DC
Continuous Drain Current (TC=100°C) I D 2.4 A DC
Single Pulsed Avalanche Energy
(2)
EAS 358 mJ
Maximum Supply Voltage V
CC,MAX 30 V
Analog Input Voltage Range V
FB -0.3 to VSD V
Total Power Dissipation
P
D 75 W
Derating 0.6 W/ °C
Operating Junction Temperature. T
J +160 °C
Operating Ambient Temperature. T
A -25 to +85 °C
Storage Temperature Range. T
STG -55 to +150 °C
KA5H0380R, KA5M0380R, KA5L0380R
Maximum Drain Voltage V
D,MAX 800 V
Drain-Gate Voltage (R
GS=1MΩ)V DGR 800 V
Gate-Source (GND) Voltage V
GS ±30 V
Drain Current Pulsed
(1)
IDM 12.0 A DC
Continuous Drain Current (TC=25°C) I D 3.0 A DC
Continuous Drain Current (TC=100°C) I D 2.1 A DC
Single Pulsed Avalanche Energy
(2)
EAS 95 mJ
Maximum Supply Voltage V
CC,MAX 30 V
Analog Input Voltage Range V
FB -0.3 to VSD V
Total Power Dissipation
P
D 75 W
Derating 0.6 W/ °C
Operating Junction Temperature. T
J +160 °C
Operating Ambient Temperature. T
A -25 to +85 °C
Storage Temperature Range. T
STG -55 to +150 °C

3. KA5X03XX-SERIES
3
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
3. L = 13µH, starting Tj = 25°C
Characteristic Symbol Value Unit
KA5M0365RN, KA5L0365RN
Maximum Drain Voltage V
D,MAX 650 V
Drain-Gate Voltage (R
GS=1MΩ)V DGR 650 V
Gate-Source (GND) Voltage V
GS ±30 V
Drain Current Pulsed
(1)
IDM 12.0 A DC
Continuous Drain Current (Ta=25°C) I D 0.42 A DC
Continuous Drain Current (Ta=100°C) I D 0.28 A DC
Single Pulsed Avalanche Energy
(2)
EAS 127 mJ
Maximum Supply Voltage V
CC,MAX 30 V
Analog Input Voltage Range V
FB -0.3 to VSD V
Total Power Dissipation
P
D 1.56 W
Derating 0.0125 W/ °C
Operating Junction Temperature. T
J +160 °C
Operating Ambient Temperature. T
A -25 to +85 °C
Storage Temperature Range. T
STG -55 to +150 °C

4. KA5X03XX-SERIES
4
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5H0365R, KA5M0365R, KA5L0365R
Drain-Source Breakdown Voltage BV
DSS VGS=0V, ID=50µA 650 - - V
Zero Gate Voltage Drain Current I
DSS
VDS=Max. Rating, VGS=0V - - 50 µA
V
DS=0.8Max. Rating,
V
GS=0V, TC=125°C
- - 200 µA
Static Drain-Source on Resistance
(Note)
RDS(ON)VGS=10V, ID=0.5A - 3.6 4.5 Ω
Forward Transconductance
(Note)
gfs V DS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
V
GS=0V, VDS=25V,
f=1MHz
- 720 -
pFOutput Capacitance Coss - 40 -
Reverse Transfer Capacitance Crss - 40 -
Turn On Delay Time td(on) V
DD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
- 150 -
nS
Rise Time tr - 100 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 42 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS=10V, ID=1.0A,
V
DS=0.5BVDSS (MOSFET
switching time is essentially
independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.3 -
Gate-Drain (Miller) Charge Qgd - 13.3 -
KA5H0380R, KA5M0380R, KA5L0380R
Drain-Source Breakdown Voltage BV
DSS VGS=0V, ID=50µA 800 - - V
Zero Gate Voltage Drain Current I
DSS
VDS=Max. Rating, VGS=0V - - 250 µA
V
DS=0.8Max. Rating,
V
GS=0V, TC=125°C
- - 1000 µA
Static Drain-Source on Resistance
(Note)
RDS(ON)VGS=10V, ID=0.5A - 4.0 5.0 Ω
Forward Transconductance
(Note)
gfs V DS=50V, ID=0.5A 1.5 2.5 - S
Input Capacitance Ciss
V
GS=0V, VDS=25V,
f=1MHz
- 779 -
pFOutput Capacitance Coss - 75.6 -
Reverse Transfer Capacitance Crss - 24.9 -
Turn On Delay Time td(on) V
DD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-40-
nS
Rise Time tr - 95 -
Turn Off Delay Time td(off) - 150 -
Fall Time tf - 60 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS=10V, ID=1.0A,
V
DS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
--34
nC
Gate-Source Charge Qgs - 7.2 -
Gate-Drain (Miller) Charge Qgd - 12.1 -
S
1
R
----=

5. KA5X03XX-SERIES
5
Electrical Characteristics (SenseFET Part)
(Ta = 25°C unless otherwise specified)
Note:
1. Pulse test: Pulse width ≤ 300µS, duty ≤ 2%
2.
Parameter Symbol Condition Min. Typ. Max. Unit
KA5M0365RN, KA5L0365RN
Drain-Source Breakdown Voltage BV
DSS VGS=0V, ID=50µA 650 - - V
Zero Gate Voltage Drain Current I
DSS
VDS=Max. Rating, VGS=0V - - 50 µA
V
DS=0.8Max. Rating,
V
GS=0V, TC=125°C
- - 200 µA
Static Drain-Source on Resistance
(Note)
RDS(ON)VGS=10V, ID=0.5A - 3.6 4.5 Ω
Forward Transconductance
(Note)
gfs V DS=50V, ID=0.5A 2.0 - - S
Input Capacitance Ciss
V
GS=0V, VDS=25V,
f=1MHz
- 314.9 -
pFOutput Capacitance Coss - 47 -
Reverse Transfer Capacitance Crss - 9 -
Turn On Delay Time td(on) V
DD=0.5BVDSS, ID=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
-11.2-
nS
Rise Time tr - 34 -
Turn Off Delay Time td(off) - 28.2 -
Fall Time tf - 32 -
Total Gate Charge
(Gate-Source+Gate-Drain)
Qg
V
GS=10V, ID=1.0A,
V
DS=0.5BVDSS (MOSFET
switching time is
essentially independent of
operating temperature)
11.93
nC
Gate-Source Charge Qgs - 1.95 -
Gate-Drain (Miller) Charge Qgd 6.85
S
1
R
----=

6. KA5X03XX-SERIES
6
Electrical Characteristics (Control Part) (Continued)
(Ta = 25°C unless otherwise specified)
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
Characteristic Symbol Test condition Min. Typ. Max. Unit
UVLO SECTION
Start Threshold Voltage V
START VFB=GND 14 15 16 V
Stop Threshold Voltage V
STOP VFB=GND 8.499.6 V
OSCILLATOR SECTION
Initial Accuracy F
OSC
KA5H0365R
KA5H0380R
90 100 110 kHz
Initial Accuracy F
OSC
KA5M0365R
KA5M0365RN
KA5M0380R
61 67 73 kHz
Initial Accuracy F
OSC
KA5L0365R
KA5L0365RN
KA5L0380R
45 50 55 kHz
Frequency Change With Temperature
(2)
--25 °C≤Ta≤+85°C- ±5 ±10 %
Maximum Duty Cycle Dmax
KA5H0365R
KA5H0380R
62 67 72 %
Maximum Duty Cycle Dmax
KA5M0365R
KA5M0365RN
KA5M0380R
KA5L0365R
KA5L0365RN
KA5L0380R
72 77 82 %
FEEDBACK SECTION
Feedback Source Current I
FB Ta=25°C, 0V<
Vfb<3V 0.7 0.9 1.1 mA
Shutdown Feedback Voltage V
SD Vfb>
6.5V 6.9 7.5 8.1 V
Shutdown Delay Current Idelay Ta=25 °C, 5V≤Vfb≤V
SD 456 µA
REFERENCE SECTION
Output Voltage
(1)
Vref Ta=25 °C 4.80 5.00 5.20 V
Temperature Stability
(1)(2)
Vref/∆T-25°C≤Ta≤+85°C-0.30.6mV/ °C
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit I
OVER Max. inductor current 1.89 2.15 2.41 A
PROTECTION SECTION
Over Voltage Protection V
OVP VCC>
24V 25 27 29 V
Thermal Shutdown Temperature (Tj)
(1)
TSD - 140 160 - °C
TOTAL STANDBY CURRENT SECTION
Start-up Current I
START VCC=14V - 100 170 µA
Operating Supply Current
(Control Part Only)
I
OP VCC<
28 - 7 12 mA

7. KA5X03XX-SERIES
7
Typical Performance Characteristics(SenseFET part)
(KA5H0365R, KA5M0365R, KA5L0365R)
110
0. 1
1
10
@Not es :
1. 300 µs Pul se Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
0. 1
1
10
@N ot e s :
1. V
DS
= 30V
2. 300 µs Pul se Test
-25
o
C
25 o
C
150
o
C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
012345
0
1
2
3
4
5
6
7
@ Note : Tj=25℃
Vgs= 10V
Vgs= 20V
R
DS( on)
, [Ω]
Drain-Source On-Resistance
I
D
,Drain Current [A]
0. 4 0. 6 0. 8 1. 0 1. 2
0. 01
0. 1
1
@Not es :
1. VGS = 0 V
2. 300 µs Pul se Test
25
o
C150
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
C
rs s
C
os s
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= s hort ed)
C
os s
= C
ds
+ C
gd
C
rs s
= C
gd
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25
0
2
4
6
8
10
V
DS
=520V
V
DS
= 320V
V
DS
=130V
@ Note : I
D
=3.0A
V
GS
,Gate-Source Voltage[V]
Q
G
,Total Gate Charge [nC]
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

8. KA5X03XX-SERIES
8
Typical Performance Characteristics (Continued)
- 50 0 50 100 150
0. 8
0. 9
1. 0
1. 1
1. 2
@ No t e s :
1. V
GS
= 0V
2. I
D
= 250µA
T
J
, Junction Temperature [
o
C]
BV
DS S
, (Normali zed)
Drain-Source Breakdown Voltage
- 50 0 50 100 150
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
@ N o t es :
1. V
GS
= 10V
2. I
D
= 1. 5 A
T
J
, Junction Temperature [
o
C]
R
DS (o n)
, (Normalized)
Drain-Source On-Resistance
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10 µs
DC
100 µs
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
3. 0
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]

10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θJC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θJC
(t)
Z
θ
JC
(t) , Thermal Response
t
1
, Square Wave Pulse Duration [sec]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response

9. KA5X03XX-SERIES
9
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)
10
0
10
1
10
-1
10
0
10
1
@Notes:
1. 300µs Pul se Test
2. T
C
= 25
o
C
V
GS
Top : 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
Bottom:4.5V
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1
@ N o t e s :
1. V
DS
= 30 V
2. 300 µs Pul se Test
- 25
o
C25
o
C
150
o
C
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
0. 4 0. 6 0. 8 1. 0
0. 1
1
10
@ N o t e s :
1. V
GS
= 0V
2. 300 µs Pul se Test
25
o
C
150
o
C
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
100
200
300
400
500
600
700
800
900
1000
C
rs s
C
os s
C
iss
C
iss
= C
gs
+ C
gd
(C
ds
= short ed)
C
os s
= C
ds
+ C
gd
C
rs s
= C
gd
Capacitance [pF]
V
DS
, Drain-Source Voltage [V]
0 5 10 15 20 25 30
0
2
4
6
8
10
@ Note : I
D
=3.0A
V
DS
=640V
V
DS
=400V
V
DS
=160V
V
GS
,Gate-Source Voltage[V]
Q
G
,Total Gate Charge [nC]
01234
0
1
2
3
4
5
6
7
8
Vgs = 10V
Vgs = 20V
@ Note : Tj=25℃
Fig3. On-Resistance vs. Drain Current
R
DS( on)
, [Ω]
Drain-Source On-Resistance
I
D
,Drain Current
Figure 1. Output Characteristics Figure 2. Thansfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

10. KA5X03XX-SERIES
10
Typical Performance Characteristics (Continued)
(KA5H0380R, KA5M0380R, KA5L0380R)

10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
single pulse
0.2
0.1
0.01
0.02
0.05
D=0.5
@ Notes :
1. Z
θJC
(t)=1.25
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
-T
C
=P
DM
*Z
θJC
(t)
Z
θ
JC
(t) , Thermal Response
t
1
, Square Wave Pulse Duration [sec]
- 50 0 50 100 150
0. 8
0. 9
1. 0
1. 1
1. 2
@ No t e s :
1. V
GS
= 0V
2. I
D
= 250µA
T
J
, Junction Temperature [
o
C]
BV
DS S
, (Normalized)
Drain-Source Breakdown Voltage
- 50 0 50 100 150
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
R
DS(on)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
@ No t e s:
1. V
GS
= 10V
2. I
D
= 1.5 A
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 µs
DC
10 µs
1 ms
10 ms
@ Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
Operation in This Area
is Limited by R
DS(on)
I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
40 60 80 100 120 140
0. 0
0. 5
1. 0
1. 5
2. 0
2. 5
3. 0
3. 5
I
D
, Drain Current [A]
T
C
, Case Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response

11. KA5X03XX-SERIES
11
Typical Performance Characteristics(SenseFET part) (Continued)
(KA5M0365RN, KA5L0365RN)
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
※ Note :
1. 250μs Pulse Test
2. T
C
= 25℃


I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
246810
10
-1
10
0
10
1


※ Note
1. V
DS
= 50V
2. 250μs Pulse Test
-55℃
150℃
25℃
I
D
, Drain Current [A]
V
GS
, Gate-Source Voltage [V]
01234567
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
V
GS
= 20V
V
GS
= 10V
※ Note : T
J
= 25℃


R
DS( ON)
[Ω],
Drain-Source On-Resistance
I
D
, Drain Current [A]
0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-1
10
0
10
1


25℃
150℃
※ Note :
1. V
GS
= 0V
2. 250μs Pulse Test
I
DR
, Reverse Drain Current [A]
V
SD
, Source-Drain Voltage [V]
10
-1
10
0
10
1
100
200
300
400
500
600
700
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
※ Note ;
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss


Capacitances [pF]
V
DS
, Drain-Source Voltage [V]
024681012
0
2
4
6
8
10
12
V
DS
= 325V
V
DS
= 130V
V
DS
= 520V
※ Note : I
D
= 3.0 A


V
GS
, Gate-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 1. Output Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance vs. Drain Current Figure 4. Source-Drain Diode Forward Voltage
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage

12. KA5X03XX-SERIES
12
Typical Performance Characteristics (Continued)
( KA5M0365RN, KA5L0365RN)
-50 0 50 100 150
0.90
0.95
1.00
1.05
1.10
1.15
※ Note :
1. V
GS
= 0 V
2. I
D
= 250 μA


BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature [
o
C]
-50 0 50 100 150
0.5
1.0
1.5
2.0
2.5
※ Note :
1. V
GS
= 10 V
2. I
D
= 1.5 A


R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
T
J
, Junction Temperature [
o
C]
Figure 7. Breakdown Voltage vs. Temperature Figure 8. On-Resistance vs. Temperature
Figure 9. Max. Safe Operating Area Figure 10. Max. Drain Current vs. Case Temperature
Figure 11. Thermal Response
10
0
10
1
10
2
10
-3
10
-2
10
-1
10
0
10
1
DC
10 s
1 s
100 ms
10 ms
1 ms
100 µs
10 µs
Operation in This Area
is Limited by R
DS(o n)


I
D
, Drain Current [A]
V
DS
, Drain-Source Voltage [V]
25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5


I
D
, Drain Current [A]
T
C
, Case Temperature [? ]
1E-5 1E-4 1E-3 0.01 0.1 1 10 100 1000
0.1
1
10
0.05
0.02
0.01
single pulse
0.2
0.1
D=0.5
? Notes :
1. Z
?JC
(t) = 80 ? /W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
?JC
(t)


Z
?JC
(t), Thermal Response
t
1
, Square Wave Pulse Duration [sec]

13. KA5X03XX-SERIES
13
Typical Performance Characteristics (Control Part) (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Fig.1 Operating Frequency
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100125150
Fos c
Fig.2 Feedback Source Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Ifb
Fig.3 Operating Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Iop
Fig.4 Max Inductor Current
0.8
0.85
0.9
0.95
1
1.05
1.1
-25 0 25 50 75 100 125 150
Ipeak
Fig.5 Start up Current
0.5
0.7
0.9
1.1
1.3
1.5
-25 0 25 50 75 100 125 150
Istart
Fig.6 Start Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs ta rt

Figure 1. Operating Frequency Figure 2. Feedback Source Current
Figure 3. Operating Supply Current Figure 4. Peak Current Limit
Figure 5. Start up Current Figure 6. Start Threshold Voltage
Iover

14. KA5X03XX-SERIES
14
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Fig.7 Stop Threshold Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs to p
Fig.8 Maximum Duty Cycle
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Dmax
Fig.9 Vcc Zener Voltage
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Vz
Fig.10 Shutdown Feedback Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs d
Fig.11 Shutdown Delay Current
0.8
0.85
0.9
0.95
1
1.05
1.1
1.15
1.2
-25 0 25 50 75 100 125 150
Idelay
Fig.12 Over Voltage Protection
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vo vp

Figure 7. Stop Threshold Voltage Figure 8. Maximum Duty Cycle
Figure 9. V
CC Zener Voltage Figure 10. Shutdown Feedback Voltage
Figure 11. Shutdown Delay Current Figure 12. Over Voltage Protection

15. KA5X03XX-SERIES
15
Typical Performance Characteristics (Continued)
(These characteristic graphs are normalized at Ta = 25°C)
Figure13. Soft Start Voltage Figure 14. Static Drain-Source on Resistance
Fig.13 Soft Start Voltage
0.85
0.9
0.95
1
1.05
1.1
1.15
-25 0 25 50 75 100 125 150
Vs s
Fig.14 Drain Source Turn-on
Resistance
0
0.5
1
1.5
2
2.5
-25 0 25 50 75 100 125 150
Rdson

()

16. KA5X03XX-SERIES
16
Package Dimensions
TO-220F-4L

17. KA5X03XX-SERIES
17
Package Dimensions (Continued)
TO-220F-4L(Forming)

18. KA5X03XX-SERIES
18
Package Dimensions (Continued)
8-DIP

19. KA5X03XX-SERIES
19
Ordering Information
TU :Non Forming Type
YDTU : Forming type
Product Number Package Marking Code BV DSS FOSC RDS(on)
KA5H0365RTU TO-220F-4L
5H0365R 650V 100kHz 3.6 Ω
KA5H0365RYDTU TO-220F-4L(Forming)
KA5M0365RTU TO-220F-4L
5M0365R 650V 67kHz 3.6 Ω
KA5M0365RYDTU TO-220F-4L(Forming)
KA5L0365RTU TO-220F-4L
5L0365R 650V 50kHz 3.6 Ω
KA5L0365RYDTU TO-220F-4L(Forming)
KA5M0365RN 8-DIP 5M0365R 650V 67kHz 3.6 Ω
KA5L0365RN 8-DIP 5L0365R 650V 50kHz 3.6 Ω
Product Number Package Marking Code BV
DSS FOSC RDS(on)
KA5H0380RTU TO-220F-4L
5H0380R 800V 100kHz 4.6 Ω
KA5H0380RYDTU TO-220F-4L(Forming)
KA5M0380RTU TO-220F-4L
5M0380R 800V 67kHz 4.6 Ω
KA5M0380RYDTU TO-220F-4L(Forming)
KA5L0380RTU TO-220F-4L
5L0380R 800V 50kHz 4.6 Ω
KA5L0380RYDTU TO-220F-4L(Forming)

20. KA5X03XX-SERIES
12/12/02 0.0m 001
Stock#DSxxxxxxxx
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