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1. Lecture 0:
Introduction

2. CMOS VLSI Design
4th Ed.
0: Introduction 2
Introduction
Integrated circuits: many transistors on one chip.
Very Large Scale Integration (VLSI): bucketloads!
Complementary Metal Oxide Semiconductor
–Fast, cheap, low power transistors
Today: How to build your own simple CMOS chip
–CMOS transistors
–Building logic gates from transistors
–Transistor layout and fabrication
Rest of the course: How to build a good CMOS chip

3. CMOS VLSI Design
4th Ed.
0: Introduction 3
Silicon Lattice
Transistors are built on a silicon substrate
Silicon is a Group IV material
Forms crystal lattice with bonds to four neighbors SiSiSi
SiSiSi
SiSiSi

4. CMOS VLSI Design
4th Ed.
0: Introduction 4
Dopants
Silicon is a semiconductor
Pure silicon has no free carriers and conducts poorly
Adding dopants increases the conductivity
Group V: extra electron (n-type)
Group III: missing electron, called hole (p-type) AsSiSi
SiSiSi
SiSiSi
B SiSi
SiSiSi
SiSiSi
-
+
+
-

5. CMOS VLSI Design
4th Ed.
0: Introduction 5
p-n Junctions
A junction between p-type and n-type semiconductor
forms a diode.
Current flows only in one direction
p-typen-type
anodecathode

6. CMOS VLSI Design
4th Ed.
0: Introduction 6
nMOS Transistor
Four terminals: gate, source, drain, body
Gate – oxide – body stack looks like a capacitor
–Gate and body are conductors
–SiO
2 (oxide) is a very good insulator
–Called metal – oxide – semiconductor (MOS)
capacitor
–Even though gate is
no longer made of metal*


* Metal gates are returning today! n+
p
GateSource Drain
bulk Si
SiO
2
Polysilicon
n+
Body

7. CMOS VLSI Design
4th Ed.
0: Introduction 7
nMOS Operation
Body is usually tied to ground (0 V)
When the gate is at a low voltage:
–P-type body is at low voltage
–Source-body and drain-body diodes are OFF
–No current flows, transistor is OFF n+
p
GateSource Drain
bulk Si
SiO
2
Polysilicon
n+
D
0
S

8. CMOS VLSI Design
4th Ed.
0: Introduction 8
nMOS Operation Cont.
When the gate is at a high voltage:
–Positive charge on gate of MOS capacitor
–Negative charge attracted to body
–Inverts a channel under gate to n-type
–Now current can flow through n-type silicon from
source through channel to drain, transistor is ON n+
p
GateSource Drain
bulk Si
SiO
2
Polysilicon
n+
D
1
S

9. CMOS VLSI Design
4th Ed.
0: Introduction 9
pMOS Transistor
Similar, but doping and voltages reversed
–Body tied to high voltage (V
DD)
–Gate low: transistor ON
–Gate high: transistor OFF
–Bubble indicates inverted behavior SiO
2
n
GateSource Drain
bulk Si
Polysilicon
p+ p+

10. CMOS VLSI Design
4th Ed.
0: Introduction 10
Power Supply Voltage
GND = 0 V
In 1980’s, V
DD = 5V
V
DD has decreased in modern processes
–High V
DD would damage modern tiny transistors
–Lower V
DD saves power
V
DD = 3.3, 2.5, 1.8, 1.5, 1.2, 1.0, …

11. CMOS VLSI Design
4th Ed.
0: Introduction 11
Transistors as Switches
We can view MOS transistors as electrically
controlled switches
Voltage at gate controls path from source to drain g
s
d
g = 0
s
d
g = 1
s
d
g
s
d
s
d
s
d
nMOS
pMOS
OFF
ON
ON
OFF

12. CMOS VLSI Design
4th Ed.
0: Introduction 12
0 VDD
A Y
GND
CMOS Inverter
A Y
0 1
1 0 A Y
OFF
ON
1
ON
OFF

13. CMOS VLSI Design
4th Ed.
0: Introduction 13
CMOS NAND Gate
A B Y
0 0 1
0 1 1
1 0 1
1 1 0
OFF OFF
ON
ON
1
1
OFF ON
OFF
ON
0
1
ON OFF
ON
OFF
1
0
ON ON
OFF
OFF
0
0 A
B
Y

14. CMOS VLSI Design
4th Ed.
0: Introduction 14
CMOS NOR Gate
A B Y
0 0 1
0 1 0
1 0 0
1 1 0 A
B
Y

15. CMOS VLSI Design
4th Ed.
0: Introduction 15
3-input NAND Gate
Y pulls low if ALL inputs are 1
Y pulls high if ANY input is 0 A
B
Y
C

16. CMOS VLSI Design
4th Ed.
0: Introduction 16
CMOS Fabrication
CMOS transistors are fabricated on silicon wafer
Lithography process similar to printing press
On each step, different materials are deposited or
etched
Easiest to understand by viewing both top and
cross-section of wafer in a simplified manufacturing
process

17. CMOS VLSI Design
4th Ed.
0: Introduction 17
Inverter Cross-section
Typically use p-type substrate for nMOS transistors
Requires n-well for body of pMOS transistors n+
p substrate
p+
n well
A
Y
GND
VDD
n+ p+
SiO2
n+ diffusion
p+ diffusion
polysilicon
metal1
nMOS transistor pMOS transistor

18. CMOS VLSI Design
4th Ed.
0: Introduction 18
Well and Substrate Taps
Substrate must be tied to GND and n-well to V
DD
Metal to lightly-doped semiconductor forms poor
connection called Shottky Diode
Use heavily doped well and substrate contacts / taps n+
p substrate
p+
n well
A
Y
GND
V
DD
n+p+
substrate tap
well
tap
n+ p+

19. CMOS VLSI Design
4th Ed.
0: Introduction 19
Inverter Mask Set
Transistors and wires are defined by masks
Cross-section taken along dashed line GND VDD
Y
A
substrate tap well tap
nMOS transistor pMOS transistor

20. CMOS VLSI Design
4th Ed.
0: Introduction 20
Detailed Mask Views
Six masks
–n-well
–Polysilicon
–n+ diffusion
–p+ diffusion
–Contact
–Metal Metal
Polysilicon
Contact
n+ Diffusion
p+ Diffusion
n well

21. CMOS VLSI Design
4th Ed.
0: Introduction 21
Fabrication
Chips are built in huge factories called fabs
Contain clean rooms as large as football fields
Courtesy of International
Business Machines Corporation.
Unauthorized use not permitted.

22. CMOS VLSI Design
4th Ed.
0: Introduction 22
Fabrication Steps
Start with blank wafer
Build inverter from the bottom up
First step will be to form the n-well
–Cover wafer with protective layer of SiO
2 (oxide)
–Remove layer where n-well should be built
–Implant or diffuse n dopants into exposed wafer
–Strip off SiO
2 p substrate

23. CMOS VLSI Design
4th Ed.
0: Introduction 23
Oxidation
Grow SiO
2 on top of Si wafer
–900 – 1200 C with H
2O or O
2 in oxidation furnace p substrate
SiO
2

24. CMOS VLSI Design
4th Ed.
0: Introduction 24
Photoresist
Spin on photoresist
–Photoresist is a light-sensitive organic polymer
–Softens where exposed to light p substrate
SiO
2
Photoresist

25. CMOS VLSI Design
4th Ed.
0: Introduction 25
Lithography
Expose photoresist through n-well mask
Strip off exposed photoresist p substrate
SiO
2
Photoresist

26. CMOS VLSI Design
4th Ed.
0: Introduction 26
Etch
Etch oxide with hydrofluoric acid (HF)
–Seeps through skin and eats bone; nasty stuff!!!
Only attacks oxide where resist has been exposed p substrate
SiO
2
Photoresist

27. CMOS VLSI Design
4th Ed.
0: Introduction 27
Strip Photoresist
Strip off remaining photoresist
–Use mixture of acids called piranah etch
Necessary so resist doesn’t melt in next step p substrate
SiO
2

28. CMOS VLSI Design
4th Ed.
0: Introduction 28
n-well
n-well is formed with diffusion or ion implantation
Diffusion
–Place wafer in furnace with arsenic gas
–Heat until As atoms diffuse into exposed Si
Ion Implanatation
–Blast wafer with beam of As ions
–Ions blocked by SiO
2, only enter exposed Si n well
SiO
2

29. CMOS VLSI Design
4th Ed.
0: Introduction 29
Strip Oxide
Strip off the remaining oxide using HF
Back to bare wafer with n-well
Subsequent steps involve similar series of steps p substrate
n well

30. CMOS VLSI Design
4th Ed.
0: Introduction 30
Polysilicon
Deposit very thin layer of gate oxide
–< 20 Å (6-7 atomic layers)
Chemical Vapor Deposition (CVD) of silicon layer
–Place wafer in furnace with Silane gas (SiH
4)
–Forms many small crystals called polysilicon
–Heavily doped to be good conductor
Thin gate oxide
Polysilicon
p substrate
n well

31. CMOS VLSI Design
4th Ed.
0: Introduction 31
Polysilicon Patterning
Use same lithography process to pattern polysilicon
Polysilicon p substrate
Thin gate oxide
Polysilicon
n well

32. CMOS VLSI Design
4th Ed.
0: Introduction 32
Self-Aligned Process
Use oxide and masking to expose where n+ dopants
should be diffused or implanted
N-diffusion forms nMOS source, drain, and n-well
contact
p substrate
n well

33. CMOS VLSI Design
4th Ed.
0: Introduction 33
N-diffusion
Pattern oxide and form n+ regions
Self-aligned process where gate blocks diffusion
Polysilicon is better than metal for self-aligned gates
because it doesn’t melt during later processing p substrate
n well n+ Diffusion

34. CMOS VLSI Design
4th Ed.
0: Introduction 34
N-diffusion cont.
Historically dopants were diffused
Usually ion implantation today
But regions are still called diffusion
n well
p substrate
n+n+ n+

35. CMOS VLSI Design
4th Ed.
0: Introduction 35
N-diffusion cont.
Strip off oxide to complete patterning step n well
p substrate
n+n+ n+

36. CMOS VLSI Design
4th Ed.
0: Introduction 36
P-Diffusion
Similar set of steps form p+ diffusion regions for
pMOS source and drain and substrate contact p+ Diffusion p substrate
n well
n+n+ n+p+p+p+

37. CMOS VLSI Design
4th Ed.
0: Introduction 37
Contacts
Now we need to wire together the devices
Cover chip with thick field oxide
Etch oxide where contact cuts are needed p substrate
Thick field oxide
n well
n+n+ n+p+p+p+ Contact

38. CMOS VLSI Design
4th Ed.
0: Introduction 38
Metalization
Sputter on aluminum over whole wafer
Pattern to remove excess metal, leaving wires
p substrate
Metal
Thick field oxide
n well
n+n+ n+p+p+p+ Metal

39. CMOS VLSI Design
4th Ed.
0: Introduction 39
Layout
Chips are specified with set of masks
Minimum dimensions of masks determine transistor
size (and hence speed, cost, and power)
Feature size f = distance between source and drain
–Set by minimum width of polysilicon
Feature size improves 30% every 3 years or so
Normalize for feature size when describing design
rules
Express rules in terms of l = f/2
–E.g. l = 0.3 mm in 0.6 mm process

40. CMOS VLSI Design
4th Ed.
0: Introduction 40
Simplified Design Rules
Conservative rules to get you started

41. CMOS VLSI Design
4th Ed.
0: Introduction 41
Inverter Layout
Transistor dimensions specified as Width / Length
–Minimum size is 4l / 2l, sometimes called 1 unit
–In f = 0.6 mm process, this is 1.2 mm wide, 0.6 mm
long

42. CMOS VLSI Design
4th Ed.
0: Introduction 42
Summary
MOS transistors are stacks of gate, oxide, silicon
Act as electrically controlled switches
Build logic gates out of switches
Draw masks to specify layout of transistors

Now you know everything necessary to start
designing schematics and layout for a simple chip!

43. CMOS VLSI Design
4th Ed.
0: Introduction 43
About these Notes
Lecture notes © 2011 David Money Harris
These notes may be used and modified for
educational and/or non-commercial purposes so
long as the source is attributed.