insulated gate bipolar transistor (IGBT).pptx

insulated gate bipolar transistor (IGBT).pptx

1. insulated gate bipolar transistor (IGBT): IGBT (Insulated Gate Bipolar Transistor) is a three terminal power switch having high input impedance and low on-state power loss as in BJT (Bipolar Junction Transistor). Thus, IGBT is a combined form of best qualities of both BJT and MOSFET. IGBT is a three-terminal device. The three terminals are Gate (G), Emitter (E) and Collector (C). The circuit symbol of IGBT is shown below.

2. physical material construction of IGBT

3. semiconductor controlled rectifier (SCR) or thyristor A thyristor is a four-layer semiconductor device, consisting of alternating P-type and N-type materials (PNPN). A thyristor usually has three electrodes: an anode, a cathode and a gate, also known as a control electrode. symbol

4. physical material construction of scr