OPTICAL TRANSDUCER-Photodiode-biosensors and transducers

476 views 16 slides Mar 17, 2024
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About This Presentation

biosensors and transducers


Slide Content

PHOTODIODE
-
Mukesh Sundararajan

Photodiodes
▶Photodiodesaresemiconductorlightsensorsthat
generateacurrentorvoltagewhentheP-Njunctionin
thesemiconductorisilluminatedbylight.Itisatypeof
photodetectorcapableofconvertinglightenergyinto
electricalenergyineithercurrentorvoltage,depending
uponthemodeofoperation.Solarcellisanexampleof
it.

▶Whenaphotonofsufficientenergystrikesthediode,it
excitesanelectron,therebycreatingafreeelectron(anda
positivelychargedelectronhole).Thismechanismisalso
knownastheinnerphotoelectriceffect.
▶Thisdevicecanbeusedinthreemodes:photovoltaicasa
solarcell,reversed–biasedasaphotodetector,andforward–
biasedasanLED.

Structure

Operation
▶Aphotodiodeisdesignedtooperateinreversebias.
▶Photoelectric effect
The photoelectric effectistheobservationthat many
metalsemit electronswhenlightshinesupon them.
Electronsemittedin thismannercanbecalled
photoelectrons.
▶Movementofthoseelectronsgiverisetophotocurrent.

Characteristics
▶Photodiodesaresimilartoregularsemiconductordiode
exceptthattheymaybeeitherexposed(todetectUVor
X-rays)orpackagedwithawindoworopticalfiberto
allowlighttoreachthesensitivepartofthedevice.
Manydiodesdesignedforusespecificallyasa
photodiodeuseaPINjunctionratherthanap-n
junction,toincreasethespeedofresponse.

Characteristics

Typesofphotodiode
▶Pinphotodiode
▶P-Nphotodiode
▶Avalanchephotodiode

FeaturesofPhotodiode
❑Excellent linearity with respect to
incidentlight
❑Lownoise
❑Widespectralresponse
❑Mechanicallyrugged
❑Compactandlightweight
❑Longlife

▶Materialscommonly used toproducephotodiodesinclude:
MATERIALS ELCTROMAGNETIC
SPECTRUMWAVELENGTH
RANGE(NM)
SILICON 190-1110
GERMANIUM 400-1700
INDIUMGALLIUMARSENIDE800-2600
LEADSUFIDE 100-3500

PHOTODIODECONSTRUCTION
CROSSSECTIONOFTHESILICONPHOTODIODE

▶Ntypesiliconisthestartingmaterial.Athin"p"layeris
formedonthefrontsurfaceofthedevicebythermal
diffusionorionimplantationoftheappropriatedoping
material(usuallyboron).
▶Theinterfacebetweenthe"p"layerandthe"n"siliconis
knownasap-njunction.Smallmetalcontactsareapplied
tothefrontsurfaceofthedeviceandtheentirebackis
coatedwithacontactmetal.
▶Thebackcontactisthecathode,thefrontcontactisthe
anode.Theactiveareaiscoatedwitheithersilicon
nitride,siliconmonoxideorsilicondioxideforprotection
andtoserveasananti-reflectioncoating.
▶Thethicknessofthiscoatingisoptimizedforparticular
irradiationwavelengths.Asanexample,aCentroVision
Series5-Tphotodiodehasacoatingwhichenhancesits
responsetothebluepartofthespectrum.

▶AtthePNjunctiontherewillaconcentration
gradientthatcauseselectronstodiffuseinto
thep-layerandholestodiffuseintothen-
layer.Thisdiffusionresultsinanopposing
electricalpotential,oftenreferredtoasan
internalbias(depletionregion).
▶Inagenericp-nphotodiode,lightentersthe
devicethroughthethinp-typelayer.Absorption
causeslightintensitytodropexponentiallywith
penetrationdepth.
▶Anyphotonsabsorbedinthedepletionregion
producechargecarriersthatareimmediately
separatedandsweptacrossthejunctionbythe
naturalinternalbias.Eventuallytherewillbethe
movementofthechargecarriers.

▶Thismovementofchargecarriersacrossthe
junctionupsetstheelectricalbalanceand
producesasmallphotocurrent,whichcanbe
detectedattheelectrodes.
▶Inmanyapplicationsitisdesirabletomaximize
thethicknessofthedepletionregion.For
example,deviceresponseisfasterwhenmostof
thechargecarriersarecreatedinthedepletion
region.
▶Thisalsoincreasesthequantumefficiencyofthe
device,sincemostchargecarrierswillnothave
theopportunitytorecombine.Thequantum
efficiencyisdefinedastheratioofthe
photocurrentinelectronstoincidentlight
intensityinphotons.

APPLICATIONS
▶Photodiodesareusedinconsumerelectronicsdevicessuch
asCDplayers,smokedetectors,andthereceiversforinfraredremotecontrol
devicesusedto controlequipmentfromtelevisionsto airconditioners.
▶Photodiodesareusedasa lightsensors.
▶Photodiodesareoftenusedforaccuratemeasurementoflightintensityin
scienceand industry.
▶Theyarealsowidelyusedinvariousmedicalapplications,suchasdetectorsfor
computertomography,instrumentstoanalyzesamples,andpulseoximeters.