Original IGBT N-Channel FGA25N120 25N120 ANTD 25A 1200V New

Original IGBT N-Channel FGA25N120 25N120 ANTD 25A 1200V New

1. ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
November 2013
FGA25N120ANTD
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Technology, Positive Temperature Coefficient
• Low Saturation Voltage: V
CE(sat), typ = 2.0 V
@ I
C = 25 A and T
C = 25C
• Low Switching Loss: E
off, typ = 0.96 mJ
@ I
C
= 25 A and T
C
= 25C
• Extremely Enhanced Avalanche Capability
Applications
• Induction Heating, Microwave Oven
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation. This device is well suited for the reso-
nant or soft switching application such as induction heating,
microwave oven.
Absolute Maximum Ratings
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
G
C
E
G
C
EGCE
TO-3P
Symbol Description Ratings Unit
V
CES
Collector-Emitter Voltage 1200 V
V
GES Gate-Emitter Voltage  20 V
I
C
Collector Current @ T
C
= 25C50 A
Collector Current @ T
C = 100C25 A
I
CM (1) Pulsed Collector Current 90 A
I
F
Diode Continuous Forward Current @ T
C
= 25C50 A
Diode Continuous Forward Current @ T
C = 100C25 A
I
FM Diode Maximum Forward Current 150 A
P
D
Maximum Power Dissipation @ T
C
= 25C 312 W
Maximum Power Dissipation @ T
C = 100C 125 W
T
J Operating Junction Temperature -55 to +150 C
T
stg
Storage Temperature Range -55 to +150 C
T
L Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300 C
Symbol Parameter Typ. Max. Unit
R
JC
(IGBT) Thermal Resistance, Junction-to-Case -- 0.4 C/W
R
JC(DIODE) Thermal Resistance, Junction-to-Case -- 2.0 C/W
R
JA Thermal Resistance, Junction-to-Ambient -- 40 C/W

2. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Package Marking and Ordering Information
Electrical Characteristics of the IGBT
T
C
= 25°C unless otherwise noted
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGA25N120ANTDTU FGA25N120ANTD TO-3P Tube N/A N/A 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
I
CES Collector Cut-Off Current V
CE = V
CES, V
GE = 0 V -- -- 3 mA
I
GES G-E Leakage Current V
GE = V
GES, V
CE = 0 V -- -- ± 250 nA
On Characteristics
V
GE(th)
G-E Threshold Voltage I
C
= 25 mA, V
CE
= V
GE
3.5 5.5 7.5 V
V
CE(sat) Collector to Emitter
Saturation Voltage
I
C = 25 A, V
GE = 15 V -- 2.0 -- V
I
C = 25 A, V
GE = 15 V,
T
C = 125C
-- 2.15 -- V
I
C = 50 A, V
GE = 15 V -- 2.65 -- V
Dynamic Characteristics
C
ies
Input Capacitance V
CE
= 30 V
,
V
GE
= 0 V,
f = 1 MHz

-- 3700 -- pF
C
oes Output Capacitance -- 130 -- pF
C
res Reverse Transfer Capacitance -- 80 -- pF
Switching Characteristics
t
d(on)
Turn-On Delay Time V
CC
= 600 V, I
C
= 25 A,
R
G = 10 , V
GE = 15 V,
Inductive Load, T
C = 25C
-- 50 -- ns
t
r Rise Time -- 60 -- ns
t
d(off) Turn-Off Delay Time -- 190 -- ns
t
f
Fall Time -- 100 -- ns
E
on Turn-On Switching Loss -- 4.1 -- mJ
E
off Turn-Off Switching Loss -- 0.96 -- mJ
E
ts
Total Switching Loss -- 5.06 -- mJ
t
d(on) Turn-On Delay Time V
CC = 600 V, I
C = 25 A,
R
G
= 10 , V
GE
= 15 V,
Inductive Load, T
C = 125C
-- 50 -- ns
t
r Rise Time -- 60 -- ns
t
d(off)
Turn-Off Delay Time -- 200 -- ns
t
f Fall Time -- 154 -- ns
E
on Turn-On Switching Loss -- 4.3 -- mJ
E
off
Turn-Off Switching Loss -- 1.5 -- mJ
E
ts Total Switching Loss -- 5.8 -- mJ
Q
g
Total Gate Charge V
CE
= 600 V, I
C
= 25 A,
V
GE = 15 V
-- 200 -- nC
Q
ge Gate-Emitter Charge -- 15 -- nC
Q
gc Gate-Collector Charge -- 100 -- nC

3. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Electrical Characteristics of DIODE T
C
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
FM
Diode Forward Voltage I
F
= 25 A T
C
= 25C--2.03.0V
T
C = 125C--2.1--
t
rr Diode Reverse Recovery Time I
F = 25 A
di
F/dt = 200 A/s
T
C = 25C -- 235 350 ns
T
C
= 125C -- 300 --
I
rr Diode Peak Reverse Recovery Cur-
rent
T
C = 25C--2740A
T
C = 125C--31--
Q
rr
Diode Reverse Recovery Charge T
C
= 25C -- 3130 4700 nC
T
C = 125C -- 4650 --

4. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Saturation Voltage
Characteristics
Figure 3. Saturation Voltage vs. Case Figure 4. Saturation Voltage vs. V
GE
Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. V
GE
Figure 6. Saturation Voltage vs. V
GE
012345
0
20
40
60
80
100
120
Common Emitter
V
GE
= 15V
T
C
= 25C
T
C
= 125C


Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0246810
0
20
40
60
80
100
120
140
160
180
10V
9V
8V
7V
20V
17V
15V12V
V
GE
= 6V
T
C
= 25C


Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
25 50 75 100 125
1.5
2.0
2.5
3.0
Common Emitter
V
GE
= 15V
40A
I
C
= 25A


Collector-Emitter Voltage, V
CE
[V]
Case Temperature, T
C
[C]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= -40C
I
C
= 12.5A


Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 125C
I
C
= 12.5A


Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]
0 4 8 12 16 20
0
4
8
12
16
20
40A
25A
Common Emitter
T
C
= 25C
I
C
= 12.5A


Collector-Emitter Voltage, V
CE
[V]
Gate-Emitter Voltage, V
GE
[V]

5. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics Fi gure 8. Turn-On Characteristics vs. Gate
Resistance
Figure 9. Turn-Off Characteristics vs. Fi gure 10. Switching Loss vs. Gate Resistance
Gate Resistance
Figure 11. Turn-On Characteristics vs. Figure 12. Turn-Off Characteristics vs.
Collector Current Collector Current
0 10203040506070
10
100
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 25A
T
C
= 25C
T
C
= 125C
td(on)
tr


Switching Time [ns]
Gate Resistance, R
G
[]
110
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
Ciss
Coss
Common Emitter
V
GE
= 0V, f = 1MHz
T
C
= 25C
Crss


Capacitance [pF]
Collector-Emitter Voltage, V
CE
[V]
0 10203040506070
1
10
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 25A
T
C
= 25C
T
C
= 125C
Eon
Eoff


Switching Loss [mJ]
Gate Resistance, R
G
[]
0 10203040506070
10
100
1000
Common Emitter
V
CC
= 600V, V
GE
= 15V
I
C
= 25A
T
C
= 25C
T
C
= 125C
td(off)
tf

Switching Time [ns]
Gate Resistance, R
G
[]
10 20 30 40 50
100
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25C
T
C
= 125C
tr
td(on)


Switching Time [ns]
Collector Current, I
C
[A]
10 20 30 40 50
100
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25C
T
C
= 125C
td(off)
tf


Switching Time [ns]
Collector Current, I
C
[A]

6. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current Figure 14. Gate Charge Characteristics
Figure 15. SOA Characteristics Figure 16. Turn-Off SOA
Figure 17. Transient Thermal Impedance of IGBT
10 20 30 40 50
0.1
1
10
Common Emitter
V
GE
= 15V, R
G
= 10
T
C
= 25C
T
C
= 125C
Eon
Eoff


Switching Loss [mJ]
Collector Current, I
C
[A]
0 20 40 60 80 100 120 140 160 180 200
0
2
4
6
8
10
12
14
16
600V
400V
Common Emitter
R
L
= 24
T
C
= 25C
Vcc = 200V


Gate-Emitter Voltage, V
GE
[V]
Gate Charge, Q
g
[nC]
1 10 100 1000
1
10
100
Safe Operating Area
V
GE
= 15V, T
C
= 125C


Collector Current, I
C
[A]
Collector-Emitter Voltage, V
CE
[V]
0.1 1 10 100 1000
0.01
0.1
1
10
100
50s
100s
1ms
DC Operation
Ic MAX (Pulsed)
Ic MAX (Continuous)
Single Nonrepetitive
Pulse T
C
= 25C
Curves must be derated
linearly with increase
in temperature

Collector Current, Ic [A]
Collector - Emitter Voltage, V
CE
[V]
1E-5 1E-4 1E-3 0.01 0.1 1 10
1E-3
0.01
0.11
10
0.1
0.5
0.2
0.05
0.02
0.01
single pulse


Thermal Response [Zthjc]
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm
 Zthjc + T
C

7. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Typical Performance Characteristics (Continued)
Figure 18. Forward Characteristics Figure 19. Reverse Recovery Current
Figure 20. Stored Charge Figure 21. Reverse Recovery Time
0.1
1
10
50
0.0 0.4 0.8 1.2 1.6 2.0
T
C
= 125C
T
C
= 25C

T
J
= 25C
T
J
= 125C
Forward Voltage , V
F
[V]
Forward Current , I
F
[A]
5 10152025
0
5
10
15
20
25
30
di
F
/dt = 100A/s
di
F
/dt = 200A/s
Reverse Recovery Currnet , I
rr
[A]
Forward Current , I
F
[A]
5 10152025
0
100
200
300

di
F
/dt = 100A/s
di
F
/dt = 200A/s
Reverse Recovery Time , t
rr
[ns]
Forward Current , I
F
[A]
5 10152025
0
1000
2000
3000
4000

di
F
/dt = 100A/s
di
F
/dt = 200A/s
Stored Recovery Charge , Q
rr
[nC]
Forward Current , I
F
[A]

8. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
Mechanical Dimensions
Figure 22. TO-3P 3L - 3LD, T03, PLASTIC, EIAJ SC-65
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9. FGA25N120ANTD — 1200 V, 25 A NPT Trench IGBT
©2006 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FGA25N120ANTD Rev. C1
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