Original Mosfet Driver AO4407A 4407A 4407 SOP-8 New Alpha&Omega

Original Mosfet Driver AO4407A 4407A 4407 SOP-8 New Alpha&Omega
https://authelectronic.com/original-mosfet-driver-ao4407a-4407a-4407-sop-8-new-alpha-omega

1. Symbol
V
DS
V
GS
I
DM
I
AR
E
AR
T
J, T
STG
Parameter Symbol Typ Max
t ≤ 10s 32 40
Steady State 60 75
Steady StateR
qJL 17 24
Junction and Storage Temperature Range
T
A=70°C
I
D
Gate-Source Voltage
P
D
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
G
Power Dissipation
A
T
A=25°C
Drain-Source Voltage
Pulsed Drain Current
B
-30
Absolute Maximum Ratings T
A=25°C unless otherwise noted
Continuous Drain
Current
A
UnitsParameter
T
A=25°C
T
A=70°C
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
Maximum Junction-to-Ambient
A
°C/W
R
qJA
A
mJ
V
V
2.0
°C-55 to 150
W
Maximum
-12
-10
3.1
±25
-60
-26
101
AO4407A
30V P-Channel MOSFET
Product Summary
V
DS = -30V
I
D = -12A (V
GS = -20V)
R
DS(ON) < 11m (V
GS = -20V)
R
DS(ON) < 13m (V
GS = -10V)
R
DS(ON) < 17m (V
GS = -6V)
100% UIS Tested
100% Rg Tested
General Description
The AO4407A uses advanced trench technology to
provide excellent R
DS(ON), and ultra-low low gate chargewith a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
SOIC-8
Top View Bottom View
D
D
D
D
S
S
S
G
G
D
S
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

2. AO4407A
Symbol Min Typ Max Units
BV
DSS -30 V
-1
T
J = 55°C -5
I
GSS ±100 nA
V
GS(th) -1.7 -2.3 -3 V
I
D(ON) -60 A
8.5 11
T
J=125°C 11.5 15
10 13
12.7 17
g
FS 21 S
V
SD -0.7 -1 V
I
S -3 A
C
iss 2060 2600 pF
C
oss 370 pF
C
rss 295 pF
R
g 2.4 3.6 W
Q
g 30 39 nC
Q
gs 4.6 nC
Q
gd 10 nC
t
D(on) 11 ns
t
r 9.4 ns
t
D(off) 24 ns
t
f 12 ns
t
rr 30 40 ns
Q
rr 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR TH E CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE N OT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY AR ISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery ChargeI
F=-12A, dI/dt=100A/ms
Drain-Source Breakdown Voltage
On state drain current
I
D = -250mA, V
GS = 0V
V
GS = -10V, V
DS = -5V
V
GS = -20V, I
D = -12A
Reverse Transfer Capacitance
I
F=-12A, dI/dt=100A/ms
Electrical Characteristics (T
J=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS mA
Gate Threshold Voltage V
DS = V
GS I
D = -250mA
V
DS = -30V, V
GS = 0V
V
DS = 0V, V
GS = ±25V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
V
GS = -6V, I
D = -10A
I
S = -1A,V
GS = 0V
V
DS = -5V, I
D = -10A
V
GS = -10V, I
D = -12A
mW
SWITCHING PARAMETERS
Gate Source Charge
Gate Drain Charge
Total Gate Charge
V
GS=-10V, V
DS=-15V, I
D=-12A
DYNAMIC PARAMETERS
Maximum Body-Diode Continuous Current
Gate resistance V
GS=0V, V
DS=0V, f=1MHz
Turn-Off DelayTime
V
GS=-10V, V
DS=-15V, R
L=1.25W,
R
GEN=3W
Turn-Off Fall Time
Turn-On DelayTime
V
GS=0V, V
DS=-15V, f=1MHz
Input Capacitance
Output Capacitance
Turn-On Rise Time
A: The value of R
qJA is measured with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
qJA is the sum of the thermal impedence from junction to lead R
qJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300ms pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. E
AR and I
AR ratings are based on low frequency and duty cycles to keep T
j=25C.
Rev10: Nov 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

3. AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
I
F=-6.5A, dI/dt=100A/ms
0
20
40
60
80
0 1 2 3 4 5
-V
DS (Volts)
Figure 1: On-Region Characteristics
-I
D
(A)
-5V
-6V
-10V
-4.5V
-4V
0
20
40
60
80
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
-V
GS(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
25°C
125°C
V
DS= -5V
0
5
10
15
20
0 4 8 12 16 20
-I
D (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mWW WW)
V
GS=-10V
V
GS=-6V
V
GS=-20V
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-V
SD (Volts)
Figure 6: Body-Diode Characteristics
-I
S
(A)
25°C
125°C
0.8
1.0
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
5
10
15
20
25
30
3 4 5 6 7 8 9 10
-V
GS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mWW WW)
I
D=-12A
25°C
125°C
V
GS= -3.5V
V
GS=-20V
I
D=-12A
V
GS=-10V
I
D=-12A
V
GS=-6V
I
D=-10A
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

4. AO4407A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15 20 25 30
Q
g (nC)
Figure 7: Gate-Charge Characteristics
-V
GS
(Volts)
0
500
1000
1500
2000
2500
3000
0 5 10 15 20 25 30
-V
DS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
C
oss
C
rss
1
10
100
1000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
Power (W)
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Z
qq qqJA
Normalized Transient
Thermal Resistance
0.01
0.1
1
10
100
0.1 1 10 100
-V
DS (Volts)
-I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100ms
10ms
1ms
100ms
10s
DC
R
DS(ON) limited
T
J(Max)=150°C
T
A=25°C
10ms
V
DS=-15V
I
D=-12A
Single Pulse
D=T
on/T
T
J,PK=T
A+P
DM.Z
qJA.R
qJA
R
qJA=75°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)=150°C
T
A=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com

5. AO4407A
V D C
Ig
Vds
D U T
V D C
Vgs
Vgs
Q g
Q gs Qgd
C harge
Gate Charge Test Circuit & W aveform
-
+
-
+
-10V
VddVgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
IAR
Ig
Vgs
-
+
V D C
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
R M
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F-I
-I
VD C
DUT VddVgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
t t
t
90%
10%
r
on
d(off)
f
o ff
d(on )
Alpha & Omega Semiconductor, Ltd. www.aosmd.com