Original N-Channel Mosfet 2SK3667 K3667 3667 600V 30A TO-220 New Toshiba

Original N-Channel Mosfet 2SK3667 K3667 3667 600V 30A TO-220 New Toshiba
https://authelectronic.com/original-n-channel-mosfet-2sk3667-3667-600v-30a-to-220-new-toshiba

1. 2SK3667
2004-12-07 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( π-MOSVI)
2SK3667

Switching Regulator Applications


• Low drain-source ON resistance: R
DS (ON) = 0.75Ω (typ.)
• High forward transfer admittance: |Y
fs| = 5.5S (typ.)
• Low leakage current: I
DSS = 100μA (V DS = 600 V)
• Enhancement mode: V
th = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V DSS
600 V
Drain-gate voltage (RGS = 20 kΩ) V DGR
600 V
Gate-source voltage V GSS
±30 V
DC (Note 1) I D
7.5
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
30
A
Drain power dissipation (Tc = 25°C) P
D
45 W
Single pulse avalanche energy
(Note 2)
E
AS
189 mJ
Avalanche current I AR 7.5 A
Repetitive avalanche energy (Note 3) EAR 4.5 mJ
Channel temperature T ch 150 °C
Storage temperature range T stg -55~150 °C

Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R th (ch-c) 2.78 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: V
DD = 90 V, Tch = 25°C, L = 5.88 mH, I AR = 7.5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.


Unit: mm

1: Gate
2: Drain
3: Source


JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2

2. 2SK3667
2004-12-07 2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I GSS V GS = ±25 V, VDS = 0 V ⎯ ⎯ ± 10 µA
Gate-source breakdown voltage V (BR) GSSIG =±10 µA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current I DSS V DS = 600 V, VGS = 0 V ⎯ ⎯ 100 µA
Drain-source breakdown voltage V (BR) DSSID = 10 mA, VGS = 0 V 600 ⎯ ⎯ V
Gate threshold voltage V th V DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance R DS (ON) VGS = 10 V, ID = 4 A ⎯ 0.75 1.0 Ω
Forward transfer admittance ⎪Yfs⎪ V DS = 10 V, ID = 4 A 1.5 5.5 ⎯ S
Input capacitance C iss ⎯ 1300 ⎯
Reverse transfer capacitance C rss ⎯ 12 ⎯
Output capacitance C oss
V
DS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 120 ⎯
pF
Rise time t r ⎯ 20 ⎯
Turn-on time t on ⎯ 50 ⎯
Fall time t f ⎯ 35 ⎯



Switching time
Turn-off time t
off







⎯
150 ⎯
ns
Total gate charge Q g ⎯ 33 ⎯
Gate-source charge Q gs ⎯ 18 ⎯
Gate-drain charge Q gd
V
DD
∼−400 V, VGS = 10 V, ID = 7.5 A
⎯ 15 ⎯
nC

Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR ⎯ ⎯ ⎯ 7.5 A
Pulse drain reverse current (Note 1) I DRP ⎯ ⎯ ⎯ 30 A
Forward voltage (diode) V DSF I DR = 7.5 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time t rr ⎯ 1200 ⎯ ns
Reverse recovery charge Q rr
I
DR = 7.5 A, VGS = 0 V,
dI
DR/dt = 100 A/µs ⎯ 12 ⎯ µC

Marking


RL = 50 Ω
0 V
10
V
V
GS
VDD
∼−200 V
I
D = 4 A
VOUT
50 Ω
Duty<
=1%, tw = 10 µs
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K3667

Part No. (or abbreviation code)

3. 2SK3667
2004-12-07 3
10
6
4
0
8
2
0 4 8 12 16
VGS = 4V
4.5
5
4.75
5.25
610,8
20
5.5 16
12
8
4
0
20
0 20 50
4.5
4.75
5.25
10
5
40 30 10
8
6
VGS = 4 V
5.5
0
0 2 4 6 8 10
8
20
Tc = −55°C
25
100
12
4
16
0
6
8
10
0
ID = 10 A
4 12 16 20
2.5
5
4
2
8
0.1
1
100
0.1 1 100
25
100
Tc = −55°C 10
10
0.1
0.1 1 100
10
VGS = 10 V､15V
10
1
DRAIN-SOURCE VOLTAGE V DS (V)

I
D – VDS

DRAIN CURRENT I
D
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST

DRAIN CURRENT I D (A)

R
DS (ON) – ID
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
(Ω)
COMMON SOURCE
Tc = 25°C
PULSE TEST
DRAIN CURRENT I D (A)

⎪Yfs⎪ – ID
COMMON SOURCE VDS
= 20 V
PULSE TEST
FORWARD TRANSFER ADMITTANCE
⎪Y
fs
⎪ (S)
DRAIN-SOURCE VOLTAGE V DS (V)

I
D – VDS

DRAIN CURRENT I
D
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
GATE-SOURCE VOLTAGE V GS (V)

I
D – VGS

DRAIN CURRENT I
D
(A)
COMMON SOURCE
VDS = 20 V
PULSE TEST

DRAIN-SOURCE VOLTAGE V
DS
(V)

GATE-SOURCE VOLTAGE V GS (V)

V
DS – VGS
COMMON SOURCE
Tc = 25℃
PULSE TEST

4. 2SK3667
2004-12-07 4
1
0.1
10
100
1000
10000
1 10 100
Ciss
Coss
Crss
160 −40 0 40 80 120 −80
4
3
2
1
0
ID = 7.5A
2
4
0
1
2
3
5
−80 −40 0 40 80 120 160
4
0
0.1
−0.2
1
10
100
−0.6 −0.8 −1.2
VGS = 0, −1 V
10
5
1
3
−0.4 −1.0
0 10 30
VDD = 100 V
VDS
VGS
400
200
40 50
500
200
100
300
400
0
20
20
8
4
12
16
0
60
0
0 40 80 120 160
20
40
200


DRAIN-SOURCE VOLTAGE V DS (V)

CAPACITANCE – V
DS

CAPACITANCE C (pF)
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
DRAIN POWER DISSIPATION
P
D
(W)
CASE TEMPERATURE Tc (°C)

P
D – Tc


DRAIN-SOURCE VOLTAGE V DS (V)

I
DR – VDS

DRAIN REVERSE CURRENT
I
DR
(A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
GATE THRESHOLD VOLTAGE
V
th
(V)

CASE TEMPERATURE Tc (°C)

V
th – Tc
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
CASE TEMPERATURE Tc (°C)

R
DS (ON) – Tc
DRAIN-SOURCE ON RESISTANCE
R
DS (ON)
( Ω)
COMMON SOURCE
VGS = 10 V
PULSE TEST

GATE-SOURCE VOLTAGE V
GS
(V)
TOTAL GATE CHARGE Q g (nC)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS

DRAIN-SOURCE VOLTAGE V
DS
(V)
COMMON SOURCE
ID = 7.5 A
Tc = 25°C
PULSE TEST

5. 2SK3667
2004-12-07 5
400
300
200
100
0
25 50 75 100 125 150
0.01
0.1
1
10
0.001
10μ 100μ 1 ｍ 10 ｍ 100ｍ 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 2.78°C/W
0.2
0.1
0.02
0.01
0.05

CHANNEL TEMPERATURE (INITIAL)
T
ch (°C)

E
AS – Tch
AVALANCHE ENERGY
E
AS
(mJ)

r
th – tw
PULSE WIDTH tw (s)


NORMALIZED TRANSIENT THERMAL
IMPEDANCE r
th (t)
/R
th (ch-c)

Duty=0.5
SINGLE PULSE
−15 V
15
V
TEST CIRCUIT WAVE FORM
I
AR
BVDSS
V
DD V DS
R
G = 25 Ω
VDD = 90 V, L = 5.88mH
⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅=
VDDBVDSS
BVDSS2
IL
2
1
ΕAS


DRAIN-SOURCE VOLTAGE V DS (V)


SAFE OPERATING AREA
0.1
1
1
10
100
10 1000 100

0.01
※ SINGLE NONREPETITIVE PULSE
Tc = 2 5℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.

ID max (PULSED) *
ID max (CONTINUOUS) *
DC OPERATION
Tc = 25°C
100 µs *
1 ms *
VDSS max

DRAIN CURRENT I
D
(A)

6. 2SK3667
2004-12-07 6

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030619EAA
RESTRICTIONS ON PRODUCT USE