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1. 1
Lecture 19:
SRAM
19: SRAM2
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Outline
‰Memory Arrays
‰SRAM Architecture
– SRAM Cell
– Decoders
– Column Circuitry
– Multiple Ports
‰Serial Access Memories
19: SRAM3
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Memory Arrays
Memory Arrays
Random Access Memory Serial Access MemoryContent Addressable Memory
(CAM)
Read/Write Memory
(RAM)
(Volatile)
Read Only Memory
(ROM)
(Nonvolatile)
Static RAM
(SRAM)
Dynamic RAM
(DRAM)
Shift Registers Queues
First In
First Out
(FIFO)
Last In
First Out
(LIFO)
Serial In
Parallel Out
(SIPO)
Parallel In
Serial Out
(PISO)
Mask ROMProgrammable
ROM
(PROM)
Erasable
Programmable
ROM
(EPROM)
Electrically
Erasable
Programmable
ROM
(EEPROM)
Flash ROM
19: SRAM4
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Array Architecture
‰2
n
wordsof 2
m
bitseach
‰If n >> m, fold by 2
k
into fewer rowsof more columns
‰Good regularity – easy to design
‰Very high density if good cells are used

2. 2
19: SRAM5
CMOS VLSI Design CMOS VLSI Design
4th Ed.
12T SRAM Cell
‰Basic building block: SRAM Cell
– Holds one bit of information, like a latch
– Must be read and written
‰12-transistor (12T) SRAM cell
– Use a simple latch connected to bitline
– 46 x 75 λunit cell
bit
write
write_b
read
read_b
19: SRAM6
CMOS VLSI Design CMOS VLSI Design
4th Ed.
6T SRAM Cell
‰Cell size accounts for most of array size
– Reduce cell size at expense of complexity
‰6T SRAM Cell
– Used in most commercial chips
– Data stored in cross-coupled inverters
‰Read:
– Precharge bit, bit_b
– Raise wordline
‰Write:
– Drive data onto bit, bit_b
– Raise wordline
bit bit_b
word
19: SRAM7
CMOS VLSI Design CMOS VLSI Design
4th Ed.
SRAM Read
‰Precharge both bitlines high
‰Then turn on wordline
‰One of the two bitlines will be pulled down by the cell
‰Ex: A = 0, A_b = 1
– bit discharges, bit_b stays high
– But A bumps up slightly
‰Read stability
– A must not flip
– N1 >> N2
bitbit_b
N1
N2
P1
A
P2
N3
N4
A_b
word
0.0
0.5
1.0
1.5
0100 200 300 400 500 600
time (ps)
word
bit
A
A_b
bit_b
19: SRAM8
CMOS VLSI Design CMOS VLSI Design
4th Ed.
SRAM Write
‰Drive one bitline high, the other low
‰Then turn on wordline
‰Bitlines overpower cell with new value
‰Ex: A = 0, A_b = 1, bit = 1, bit_b = 0
– Force A_b low, then A rises high
‰Writability
– Must overpower feedback inverter
– N2 >> P1
time (ps)
word
A
A_b
bit_b
0.0
0.5
1.0
1.5
0100 200 300 400 500 600 700
bitbit_b
N1
N2
P1
A
P2
N3
N4
A_b
word

3. 3
19: SRAM9
CMOS VLSI Design CMOS VLSI Design
4th Ed.
SRAM Sizing
‰High bitlines must not overpower inverters during
reads
‰But low bitlines must write new value into cell
bitbit_b
med
A
weak
strong
med
A_b
word
19: SRAM10
CMOS VLSI Design CMOS VLSI Design
4th Ed.
SRAM Column Example
Read Write H
H
SRAM Cell
word_q1
bit_v1f
bit_b_v1f
out_v1r out_b_v1r
φ
1
φ
2
word_q1
bit_v1f
out_v1r
φ
2
More
CellsBitline Conditioning
φ
2
More
Cells
SRAM Cell
word_q1
bit_v1f
bit_b_v1f
data_s1
write_q1
Bitline Conditioning
19: SRAM11
CMOS VLSI Design CMOS VLSI Design
4th Ed.
SRAM Layout
‰Cell size is critical: 26 x 45 λ(even smaller in industry)
‰Tile cells sharing V
DD
, GND, bitline contacts
VDD
GND
GND BIT BIT_B
WORD
Cell boundary
19: SRAM12
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Thin Cell
‰In nanometer CMOS
– Avoid bends in polysilicon and diffusion
– Orient all transistors in one direction
‰Lithographically friendlyor thin celllayout fixes this
– Also reduces length and capacitance of bitlines

4. 4
19: SRAM13
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Commercial SRAMs
‰Five generations of Intel SRAM cell micrographs
– Transition to thin cell at 65 nm
– Steady scaling of cell area
19: SRAM14
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Decoders
‰n:2
n
decoder consists of 2
n
n-input AND gates
– One needed for each row of memory
– Build AND from NAND or NOR gates
Static CMOS Pseudo-nMOS
word0
word1
word2
word3
A0 A1
A1
word
A0
11
1/2
2
4
8
16
word
A0
A1
1
1
1 1
4
8 word0
word1
word2
word3
A0 A1
19: SRAM15
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Decoder Layout
‰Decoders must be pitch-matched to SRAM cell
– Requires very skinny gates
GND
VDD
word
buffer inverter NAND gate
A0 A0
A1 A2 A3
A2
A3 A1
19: SRAM16
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Large Decoders
‰For n > 4, NAND gates become slow
– Break large gates into multiple smaller gates
word0
word1
word2
word3
word15
A0 A1 A2
A3

5. 5
19: SRAM17
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Predecoding
‰Many of these gates are redundant
– Factor out common
gates into predecoder
– Saves area
– Same path effort
A0
A1
A2
A3
word1
word2
word3
word15
word0
1 of 4 hot
predecoded lines
predecoders
19: SRAM18
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Column Circuitry
‰Some circuitry is required for each column
– Bitline conditioning
– Sense amplifiers
– Column multiplexing
19: SRAM19
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Bitline Conditioning
‰Precharge bitlines high before reads
‰Equalize bitlines to minimize voltage difference
when using sense amplifiers
φ
bit bit_b
φ
bit bit_b
19: SRAM20
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Sense Amplifiers
‰Bitlines have many cells attached
– Ex: 32-kbit SRAM has 128 rows x 256 cols
– 128 cells on each bitline
‰t
pd
∝(C/I) ΔV
– Even with shared diffusion contacts, 64C of
diffusion capacitance (big C)
– Discharged slowly through small transistors
(small I)
‰Sense amplifiersare triggered on small voltage
swing (reduce ΔV)

6. 6
19: SRAM21
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Differential Pair Amp
‰Differential pair requires no clock
‰But always dissipates static power
bit bit_b
sense_bsense
N1 N2
N3
P1 P2
19: SRAM22
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Clocked Sense Amp
‰Clocked sense amp saves power
‰Requires sense_clk after enough bitline swing
‰Isolation transistors cut off large bitline capacitance
bit_b bit
sense sense_b
sense_clk
isolation
transistors
regenerative
feedback
19: SRAM23
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Twisted Bitlines
‰Sense amplifiers also amplify noise
– Coupling noise is severe in modern processes
– Try to couple equally onto bit and bit_b
– Done by twistingbitlines
b0 b0_b
b1 b1_b b2 b2_b
b3 b3_b
19: SRAM24
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Column Multiplexing
‰Recall that array may be folded for good aspect ratio
‰Ex: 2 kword x 16 folded into 256 rows x 128 columns
– Must select 16 output bits from the 128 columns
– Requires 16 8:1 column multiplexers

7. 7
19: SRAM25
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Tree Decoder Mux
‰Column mux can use pass transistors
– Use nMOS only, precharge outputs
‰One design is to use k series transistors for 2
k
:1 mux
– No external decoder logic needed
B0
B1 B2 B3 B4 B5 B6 B7
B0B1 B2 B3 B4 B5 B6 B7
A0
A0
A1 A1 A2
A2
YY
to sense amps and write circuits
19: SRAM26
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Single Pass-Gate Mux
‰Or eliminate series transistors with separate decoder
A0 A1
B0 B1 B2 B3
Y
19: SRAM27
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Ex: 2-way Muxed SRAM
More
Cells
word_q1
write0_q1
φ
2
More
Cells
A0
A0
φ
2
data_v1
write1_q1
19: SRAM28
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Multiple Ports
‰We have considered single-ported SRAM
– One read or one write on each cycle
‰MultiportedSRAM are needed for register files
‰Examples:
– Multicycle MIPS must read two sources or write a
result on some cycles
– Pipelined MIPS must read two sources and write
a third result each cycle
– Superscalar MIPS must read and write many
sources and results each cycle

8. 8
19: SRAM29
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Dual-Ported SRAM
‰Simple dual-ported SRAM
– Two independent single-ended reads
– Or one differential write
‰Do two reads and one write by time multiplexing
– Read during ph1, write during ph2
bit bit_b
wordB
wordA
19: SRAM30
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Multi-Ported SRAM
‰Adding more access transistors hurts read stability
‰Multiported SRAM isolates reads from state node
‰Single-ended bitlines save area
19: SRAM31
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Large SRAMs
‰Large SRAMs are split into subarrays for speed
‰Ex: UltraSparc 512KB cache
– 4 128 KB subarrays
– Each have 16 8KB banks
– 256 rows x 256 cols / bank
– 60% subarray area efficiency
– Also space for tags & control
[Shin05]
19: SRAM32
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Serial Access Memories
‰Serial access memories do not use an address
– Shift Registers
– Tapped Delay Lines
– Serial In Parallel Out (SIPO)
– Parallel In Serial Out (PISO)
– Queues (FIFO, LIFO)

9. 9
19: SRAM33
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Shift Register
‰Shift registersstore and delay data
‰Simple design: cascade of registers
– Watch your hold times!
clk
Din
Dout
8
19: SRAM34
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Denser Shift Registers
‰Flip-flops aren’t very area-efficient
‰For large shift registers, keep data in SRAM instead
‰Move read/write pointers to RAM rather than data
– Initialize read address to first entry, write to last
– Increment address on each cycle
Din
Dout
clk
counter
counter
reset
00...00
11...11
readaddr
writeaddr
dual-ported
SRAM
19: SRAM35
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Tapped Delay Line
‰A tapped delay lineis a shift register with a
programmable number of stages
‰Set number of stages with delay controls to mux
– Ex: 0 – 63 stages of delay
SR32
clk
Din
delay5
SR16
delay4
SR8
delay3
SR4
delay2
SR2
delay1
SR1
delay0
Dout
19: SRAM36
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Serial In Parallel Out
‰1-bit shift register reads in serial data
– After N steps, presents N-bit parallel output
clk
P0 P1 P2 P3
Sin

10. 10
19: SRAM37
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Parallel In Serial Out
‰Load all N bits in parallel when shift = 0
– Then shift one bit out per cycle
clk
shift/load
P0 P1 P2 P3
Sout
19: SRAM38
CMOS VLSI Design CMOS VLSI Design
4th Ed.
Queues
‰Queuesallow data to be read and written at different
rates.
‰Read and write each use their own clock, data
‰Queue indicates whether it is full or empty
‰Build with SRAM and read/write counters (pointers)
Queue
WriteClk
WriteData
FULL
ReadClk
ReadData
EMPTY
19: SRAM39
CMOS VLSI Design CMOS VLSI Design
4th Ed.
FIFO, LIFO Queues
‰First In First Out(FIFO)
– Initialize read and write pointers to first element
– Queue is EMPTY
– On write, increment write pointer
– If write almost catches read, Queue is FULL
– On read, increment read pointer
‰Last In First Out(LIFO)
– Also called a stack
– Use a single stack pointerfor read and write