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THE SOLID STATE
Dr. K.S. VIKAS 1
CONTENTS
Typesofsolids
Typesofstructuresadoptedbysolids
Imperfectionsinsolids
Dr. K.S. VIKAS 2
SOLIDS can be divided into twocategories.
Crystalline
Amorphous
Crystalline has long range order
Amorphous materials have short range order
Dr. K.S. VIKAS 3
Dr. K.S. VIKAS
•Crystalline solid: well-ordered, definite arrangements of
molecules, atoms or ions.
•Crystals have an ordered, repeated structure.
•sharp melting point
•Anisotropy
•True solids
•Amorphous solid: no definite arrangement of molecules,
atoms, or ions (i.e., lack well-defined structures or
shapes).
•Amorphous solids vary in their melting points.
•Isotropy
•Pseudo solids (super cooled liquids)
Types of Solids
4
Dr. K.S. VIKAS 5
Molecular SolidsCovalent Solids Ionic solids
Metallic solids
Na
+
Cl
-
STRUCTURE AND TYPES OF
CRYSTALLINE SOLIDS
Dr. K.S. VIKAS 6
Types of Crystalline Solids
1. Molecular Solids
•Lattice points occupied by molecules
•Held together by intermolecular forces like
London forces, dipole-dipole force or hydrogen
bonding
•Soft, low melting point
•Poor conductor of heat and electricity
Dr. K.S. VIKAS 7
Types of Crystalline Solids
2. Ionic Solids
•Lattice points occupied by cations and anions
•Held together by electrostatic attraction
•Hard, brittle, high melting point
•Poor conductor of heat and electricity
CsCl ZnS CaF
2
Dr. K.S. VIKAS 8
Types of Crystalline Solids
3. Covalent Solids
•Lattice points occupied by atoms
•Held together by covalent bonds
•Hard, high melting point
•Poor conductor of heat and electricity
diamond graphite
carbon
atoms
Dr. K.S. VIKAS 9
Types of Crystalline Solids
4. Metallic Solids
•Lattice points occupied by positive metal ions
•Held together by metallic bonds
•Soft to hard, low to high melting point
•Good conductors of heat and electricity
Cross Section of a Metallic Crystal
nucleus &
inner shell e
-
mobile “sea”
of e
-
Dr. K.S. VIKAS 10
Crystal
Type
ParticlesInterparticle
Forces
Physical Behaviour Examples
Molecular
Ionic
Covalent
or Network
Metallic
Molecules
Positive
and
negative
ions
Atoms
Positive
metal ions
Dispersion
Dipole-
dipole
H-bonds
Electrostatic
attraction
Covalent
Metallic
bond
Fairlysoft
Lowtomoderatemp
Poorthermalandelectrical
conductors
Hardandbrittle
Highmp
Goodthermalandelectrical
conductorsinmolten
condition
•Veryhard
•Veryhighmp
•Poorthermalandelectrical
conductors
Softtohard
Lowtoveryhighmp
Mellableandductile
Excellentthermaland
electricalconductors
O
2, P
4, H
2O,
Sucrose
NaCl, CaF
2,
MgO
SiO
2
(Quartz)
C (Diamond)
Na, Cu, Fe
TYPES OF CRYSTALLINE SOLIDS
Dr. K.S. VIKAS 11
CRYSTAL STRUCTURE
CristalLattice:CrystalLatticeisthearrangementofpointsin
threedimensionalspace,representingconstituentparticlesina
crystal.
SpaceLatticeArrangementsofatoms
=Latticeofpointsontowhichtheatomsarehung.
Elemental solids (Argon): Basis= single atom.
Polyatomic Elements: Basis= two or four atoms.
Complex organic compounds:Basis= thousands of atoms.
+
Space Lattice +Basis = Crystal Structure
=
• • •
• • •
• • •
Dr. K.S. VIKAS 12
Definitions
1. The unit cell
“The smallest repeat unit of a crystal structure,
which when repeats in all the three dimensions to
form the crystal”
The unit cell is a box with:
•3 sides -a, b, c
•3 angles -, ,
Dr. K.S. VIKAS 13
Dr. K.S. VIKAS
Unit Cells
Thesmallestrepeatingunitthatshows
thesymmetryofthepatterniscalledthe
unitcell.
Structures of Solids
14
TWO DIMENTIONAL UNIT CELL POSSIBILITIES OF NaCl
Na
+
Cl
-
Dr. K.S. VIKAS 15
Primitive ( P ) Body Centered ( I )
Face Centered ( F ) End-Centered (C )
LATTICE TYPES
Dr. K.S. VIKAS 16
Lattices
In 1848, AugusteBravaisdemonstrated
that in a 3-dimensional system there are
fourteen possible lattices
A Bravaislattice is an infinite array of
discrete points with identical environment
seven crystal systems + four lattice
centering types = 14 Bravaislattices
Auguste Bravais
(1811-1863)
Dr. K.S. VIKAS 17
BRAVAIS LATTICES
7 UNIT CELL TYPES+ 4
LATTICE TYPES= 14
BRAVAIS LATTICES
Dr. K.S. VIKAS 18
Dr. K.S. VIKAS
•Three common types of Cubic unit cell.
•Primitive cubic, atoms at the corners of a simple cube
–each atom shared by 8 unit cells;
Common Types of Cubic Unit Cells
19
•Body-centered cubic(bcc), atoms at the corners of a
cube plus one in the center of the body of the cube,
–corner atoms shared by 8 unit cells, center atom completely
enclosed in one unit cell;
•Face-centered cubic(fcc), atoms at the corners of a
cube plus one atom in the center of each face of the cube,
–corner atoms shared by 8 unit cells, face atoms shared by 2
unit cells.
Dr. K.S. VIKAS 20
Shared by 8unit cells
Shared by 2unit cells
Dr. K.S. VIKAS 21
Dr. K.S. VIKAS
Unit Cells
22
Dr. K.S. VIKAS 23
Table showing Atom Fractions
in Unit Cells
Position in the
Unit Cell
Fraction in the
unit cell
Corner 1/8
Body Centre 1
Face Centre 1/2
1 atom/unit cell
(8 x 1/8 = 1)
2 atoms/unit cell
(8 x 1/8 + 1 = 2)
4 atoms/unit cell
(8 x 1/8 + 6 x 1/2 = 4)
Number of Atoms in a Unit Cell
Dr. K.S. VIKAS 24
CLOSE-PACKING OF SPHERES
Dr. K.S. VIKAS 25
CLOSE-PACKING IN TWO DIMENSIONS
SQUARE PACKING
AAA…. Type
Each particle in contact with
4 others
HEXAGONALCLOSE PACKING
ABAB…. Type
Each particle in contact with
6 others
Dr. K.S. VIKAS 26
TWO LAYERS PACKING
Dr. K.S. VIKAS 27
THREE LAYERS PACKING
Dr. K.S. VIKAS 28
Dr. K.S. VIKAS 29
Hexagonal close packing Cubic close packing
Dr. K.S. VIKAS 30
Packing Efficiency
volume of sphere
Packing Efficiency =----------------------------X 100
Total volume of cube
Dr. K.S. VIKAS 31
(N)x (4/3 Πr
3
)
= ---------------------X100
a
3
Dr. K.S. VIKAS 32
Packing Efficiency of Primitive Cubic Crystal
volume of sphere
Packing Efficiency =----------------------------X 100
Total volume of cube
Dr. K.S. VIKAS 33
(N)x (4/3 Πr
3
)
= ---------------------X100
a
3
1 x (4/3 Πr
3
)
= ---------------------X100
(2r)
3
= 52.4%
Packing Efficiency of Body Centred Cubic
Crystal
volume of sphere
Packing Efficiency =----------------------------X 100
Total volume of cube
Dr. K.S. VIKAS 34
(N)x (4/3 Πr
3
)
= ---------------------X100
a
3
2 x (4/3 Πr
3
)
= ---------------------X100
(4/3 r)
3
= 68%
Packing Efficiency of bcc, hcp& ccp
volume of sphere
Packing Efficiency =----------------------------X 100
Total volume of cube
Dr. K.S. VIKAS 35
(N)x (4/3 Πr
3
)
= ---------------------X100
a
3
4 x (4/3 Πr
3
)
= ---------------------X100
(2√2 r)
3
= 74%
NON-CLOSE-PACKED STRUCTURES
68% of space is occupied
Coordination number = 8
a) Body centered cubic ( BCC ) b) Primitive cubic ( P)
52% of space is occupied
Coordination number = 6
Dr. K.S. VIKAS 36
Dr. K.S. VIKAS
Face-Centered Cubic Crystal Structure
68% of space is occupied
Hexagonal close packing &
Cubic close packing also
occupy the same space
Dr. K.S. VIKAS 38
TETRAHEDRAL HOLES
OCTAHEDRAL HOLES
TYPE OF HOLES IN CLOSE PACKING
Dr. K.S. VIKAS 39
Imperfections in Solids
or
crystal defects
Crystal Defects
•Perfect crystals do not exist; even the best crystals have
defects.
–defects are imperfectionsin the regular repeating
pattern
–Point defect
–Line defect
1.Point Defects
A.Vacancies
–given a perfect crystal (e.g. of Cu), an atom can be placed
on the outside of the cell to produce a vacancy (≡□).
Dr. K.S. VIKAS 41
Types of Defects
Stoichiometric Defects:
stoichiometry is not disturbed
Non-stoichiometric Defects:
stoichiometry is disturbed
Impurity defects
1. Stoichiometric Defects
1)Shottky Defect
–equal numbers
of anion and cation vacancies.
–may be randomly distributed, but tend
to cluster because of oppositely charged
vacancies.
–most important with alkali halides.
Dr. K.S. VIKAS 44
2)Frenkel Defect
Dislocation of cation
cation occupies
interstitial position(void
between normal atomic
position).
Dr. K.S. VIKAS 45
Non-stoichiometric Defects
Metal excess defect
anion vacancies
excess cation
Metal deficiency defect
cation vacancies
Metal excess
defect
Anion vacancies
An anion is missing from the
crystal lattice and that place
is occupied by an electron
Color Centers (F-center; Ger:
farbenzentre)
Dr. K.S. VIKAS 47
Excess cation: in interstitial places
Metal deficiency defect cation
vacancies
3. Impurity defect
Electrical Properties
Conductors
Insulators
Semiconductors
52
Energy (E
g) required to promote electrons from the valence band to the
conduction band.
Energy Gap
Insulators
In insulators there are no free
electronsto move throughout
the material.
Inter-atomic bonding is ionic or
strongly covalent. The valence
electrons are tightly bonded,
highly localized and not free to
scatter throughout the crystal.
The band-gap is large, the
valence band is full, and the
conduction band is empty.
54
• Insulators:
--wide band gap (> 2 eV)
--few electrons excited
across band gap
Energy
filled
band
filled
valence
band
filled states
GAP
empty
band
conduction
55
Semiconductors
• Semiconductors:
--narrow band gap (< 2 eV)
--more electrons excited
across band gap
Energy
filled
band
filled
valence
band
filled states
GAP
?
empty
band
conduction
In semiconductors,
bonding is
predominantly covalent
(relatively weak).
These electrons are
more easily removed by
thermal excitation.
The band-gap is
smaller, the valence
band is full, and the
conduction band is
empty.
56
Conductors
--for metals, empty energy states are adjacent to filled states.
•two types of band
structures for metals
•thermal energy
excites electrons
into empty higher
energy states.
-partially filled band
-empty band that
overlaps filled band
filled
band
Energy
partly
filled
band
empty
band
GAP
filled states
Partially filled band
Energy
filled
band
filled
band
empty
band
filled states
Overlapping bands
Intrinsic Semiconductor
materials
Silicon and germanium each
have 4electrons in their outer
orbital. This allows them to
form crystals.
In a silicon lattice, all silicon
atoms covalentlybond to 4
neighbors, leaving no free
electrons to conduct electric
current. This makes a silicon
crystal an insulator rather than
a conductor.
A chip, an LED and a
transistor are all made
from semiconductor
material.
Intrinsic Semiconductor
On heating some of the covalent bonds
between silicon atoms are broken and as a
result they conduct electricity
Semiconductors in the pure form is called
intrinsic semiconductors
Extrinsic semiconductors
They contain some suitable impurities in their crystal
lattice. This process of adding impurities to the crystal
is called doping. They are classified into two based on
the impurity present in it.
n-type semiconductor
p-type semiconductor
Doping Silicon to Create n-Type
Silicon
The "dopant” has 5 valence electrons;
silicon has 4.
Substituting a phosphorus atom with
5 valence electronsfor a silicon atom
in a silicon crystal leaves an extra,
unbonded electron that is relatively
free to move around the crystal.
Doping Silicon to Create p-Type
Silicon
The "dopant” has 5 valence
electrons; silicon has 4.
Substituting a boron atom
with 3 valenceelectrons for a
silicon atom in a silicon
crystal leaves a hole(a bond
missing an electron) that is
relatively free to move around
the crystal.
When a dopant atom with a valence of less than four is substituted
into the silicon structure, a hole is created in the structure and an
acceptor energy level is created just above the valence band. Little
energy is required to excite the holes into motion.
Magnetic Properties
Diamagnetism
Paramagnetism
Ferromagnetism
Antiferromagnetism
Ferrimagnetism
Diamagnetism
Diamagnetic materials tend
to repelflux lines weakly
All the electrons are paired
They lose their magnetism in
the absence of external
magnetic field.
Examples: water, protein, fat
Paramagnetism
Paramagnetic substances are attracted weakly by a
magnetic field.
They lose their magnetism in the absence of external
magnetic field.
They have one or more unpaired electrons.
E.g. O
2, Cu
2+
, Fe
3+
, Cr
3+
Ferromagnetism
Materials that retain a
magnetization in zero field
They areattracted strongly
by a magnetic field
They have moreunpaired
electrons.
Examples: iron, cobalt
Antiferromagnetism
They are expected to be
ferromagnetic but shows
zero magnetic moment.
The magnetic moments are
oppositely arranged and
hence cancel each other.
Many metal oxides are
antiferromagnetic
Ferrimagnetism
They are expected to be
ferromagnetic but shows only
small magnetic moment.
The magnetic moments are
oppositely arranged but all
magnetic moments are not
canceled.
E.g. Fe
2O3