An overview, advantages and disadvantages of X-Rays Lithography
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Language: en
Added: Oct 22, 2017
Slides: 14 pages
Slide Content
X-Ray
Photolithography
Contents
Lithography
Lithographic Process
X-Ray Photolithography
Sources of X-Rays
i) Electron Impact X-Ray Sources
ii) Synchrotron X-ray source
Procedure of X-Ray Photolithography
Advantages
Applications
Limitations
Lithography is the process of printing
patterns onto a thin film called resist, using
localized interaction between this layer and
the particle beam.
What Is Lithography
G. D. Hutcheson, et al., Scientific American, 274, 54 (1996).
Lithographic Process
Sources of X-rays
1)Electron Impact X-Ray
Sources
E-beam accelerated at high energy
by the metals anode.
By striking the target x-rays are
emitted.
Fig1Electron beam Impact X-Ray source
Procedure of X-Ray Photolithography
PMMA is applied to the surface of silicon
wafer
PMMA hardens when contacted with x-
rays
X-ray mask is applied on top of silicon
wafer before exposure
Absorber
Membrane
Synchrotron radiation (0.2 –2 nm)
Gap between substrate and mask
Fig 3: Procedures of X-Ray Lithography
Proximity mask
Fig 4: X-Ray Lithography use only Proximity mask
Less diffraction effect
High Resolution.
Large Area (Large
depth of focus )
Excellent resist profiles
R. Waser(ed.), Nanoelectronicsand Information Technology, Chapter 9
Advantages
Fig 5: Patterns produced by x-ray photolithography
For febricationof gigabit DRAM.
Applications
Fig 6: Photograph of DRAM
J. Zyss(Ed.): Photonique Mol´eculaire: Mat´eriaux, Physique et Composants, C.R. Physique 3,
No. 4 (2002)
Used in the MEMS(micro-electro mechanical
systems) technology.
Fig 7: Photograph of MEMS
Applications
SunneyXie, X., and Trautman, J.K.: Ann. Rev. Phys. Chem. 49, 441–480 (2008)
Thin Lens
Distortion in absorber
Cannot be focused through lens
Masks are expensive to produce
Limitations