SEMINAR Justin George S3 AEI 13 Dept. Of AEI VJEC Chemperi
Topic: FinFET 2
List of Contents What is FinFET ? Construction of finFET Working of finFET Where is finFET used? Advantages of finFET Disadvantages of finFET FinFET over MOSFET Applications Conclusion 3
What is FinFET ? FinFET is a type of non-planar transistor. It is the basis for modern nanoelectronic semiconductor device fabrication. This double gate transistor built on an SOI substrate, based on the single gate transistor design. 4
Construction of a FinFET 1. Substrate 2. Fin etch 3. Oxide Deposition 5
4. Planarization 5. Recess etch 6. Gate Oxide 6
7. Deposition of the Gate Finally a highly n+-doped poly silicon layer is deposited on top of the fins, thus up to three gates are wrapped around the channel: one on each side of the fin, and - depending on the thickness of the gate oxide on top - a third gate above. 7
Working of a FinFET As opposed to a traditional planar transistor, the finFET has an elevated channel or ‘fin’, which the gate wraps around. Due to the structure, finFET generate much lower leakage power and allow greater device density. Compared to planar transistor, finFET operate at a lower voltage and offer higher drive current. 8
Where is FinFET used? FinFET technology is being used in many areas of IC technology where the 3D fins provide added density for same feature size. FinFET technology has recently seen a major increase in adoption for use within integrated circuits. 9
Advantages of finFET Higher technological maturity. Suppressed short channel effect (SCE). Better in driving current. More compact. Low cost. 10
Disadvantages of finFET Reduced mobility for electrons. Higher source and drain resistances. Poor reliability. 11
FinFET over MOSFET FinFET technology provides numerous advantages over bulk CMOS, such as higher drive current for a given transistor footprint, hence higher speed, lower leakage, hence lower power consumption, no random dopant fluctuation, hence better mobility and scaling of the transistor. 12
Applications Possibility to save power arises when both gates can be controlled separately. The second gate can be used to control the threshold voltage of the device. Separate access to both gates could also be used to design simplified logic gates. This would also reduce power, and save chip area, more cost-efficient designs. Samsung Electronics has incorporated finFET in its ‘Exynos7 Octra ’ processors used in latest Samsung Smartphones . 13
Conclusion The introduction of finFET technology is a breakthrough in the field of technology. It has improved the efficiency of many devices which are used in day-to-day life. 14